THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE
    1.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
    薄膜晶体管阵列基板,有机发光显示装置及制造薄膜晶体管阵列基板的方法

    公开(公告)号:US20150123084A1

    公开(公告)日:2015-05-07

    申请号:US14231263

    申请日:2014-03-31

    Abstract: A thin film transistor array substrate includes: a substrate; a bottom gate electrode including a gate area doped with ion impurities and undoped areas on left and right sides of the gate area; an active layer on the bottom gate electrode with a first insulating layer therebetween and including a source contact region, a drain contact region, and an oxide semiconductor region; a top gate electrode on the active layer with a second insulating layer therebetween; and a source electrode in contact with the source contact region and a drain electrode in contact with the drain contact region, the source electrode and the drain electrode being on the top gate electrode with a third insulating layer therebetween. The oxide semiconductor region is between the source contact region and the drain contact region.

    Abstract translation: 薄膜晶体管阵列基板包括:基板; 底栅电极,其包括掺杂有离子杂质的栅极区域和在栅极区域的左侧和右侧的未掺杂区域; 底栅电极上的有源层,其间具有第一绝缘层,并且包括源极接触区域,漏极接触区域和氧化物半导体区域; 有源层上的顶栅电极,其间具有第二绝缘层; 以及与所述源极接触区域接触的源极电极和与所述漏极接触区域接触的漏极电极,所述源极电极和所述漏极电极位于所述顶部栅极电极上,在其间具有第三绝缘层。 氧化物半导体区域在源极接触区域和漏极接触区域之间。

    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20140071368A1

    公开(公告)日:2014-03-13

    申请号:US13733841

    申请日:2013-01-03

    Abstract: A liquid crystal display device and a method of manufacturing the liquid crystal display device are provided. The liquid crystal display device includes: a first substrate, a second substrate opposing the first substrate, an interconnection portion on the first substrate, an ultraviolet light blocking portion adjacent to both sides of the interconnection portion, an organic film on the first substrate and covering the interconnection portion and the ultraviolet light blocking portion, a liquid crystal layer between the organic film and the second substrate, and a sealing member overlapping the interconnection portion and surrounding the liquid crystal layer between the organic film and the second substrate. The liquid crystal display device reduces or minimizes organic film defects caused by radiating ultraviolet light to form the sealing member.

    Abstract translation: 提供一种液晶显示装置和液晶显示装置的制造方法。 液晶显示装置包括:第一基板,与第一基板相对的第二基板,第一基板上的布线部分,与互连部分两侧相邻的紫外线阻挡部分,第一基板上的有机膜和覆盖物 互连部分和紫外线阻挡部分,有机膜和第二基板之间的液晶层,以及与互连部分重叠并围绕有机膜和第二基板之间的液晶层的密封部件。 液晶显示装置降低或最小化由辐射紫外光引起的有机膜缺陷以形成密封构件。

    Liquid crystal display device and method of manufacturing the same
    5.
    发明授权
    Liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置及其制造方法

    公开(公告)号:US09097932B2

    公开(公告)日:2015-08-04

    申请号:US13733841

    申请日:2013-01-03

    Abstract: A liquid crystal display device and a method of manufacturing the liquid crystal display device are provided. The liquid crystal display device includes: a first substrate, a second substrate opposing the first substrate, an interconnection portion on the first substrate, an ultraviolet light blocking portion adjacent to both sides of the interconnection portion, an organic film on the first substrate and covering the interconnection portion and the ultraviolet light blocking portion, a liquid crystal layer between the organic film and the second substrate, and a sealing member overlapping the interconnection portion and surrounding the liquid crystal layer between the organic film and the second substrate. The liquid crystal display device reduces or minimizes organic film defects caused by radiating ultraviolet light to form the sealing member.

    Abstract translation: 提供一种液晶显示装置和液晶显示装置的制造方法。 液晶显示装置包括:第一基板,与第一基板相对的第二基板,第一基板上的布线部分,与互连部分两侧相邻的紫外线阻挡部分,第一基板上的有机膜和覆盖物 互连部分和紫外线阻挡部分,有机膜和第二基板之间的液晶层,以及与互连部分重叠并围绕有机膜和第二基板之间的液晶层的密封部件。 液晶显示装置降低或最小化由辐射紫外光引起的有机膜缺陷以形成密封构件。

    ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF REPAIRING THE SAME
    6.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF REPAIRING THE SAME 审中-公开
    有机发光显示装置及其修复方法

    公开(公告)号:US20150138171A1

    公开(公告)日:2015-05-21

    申请号:US14297452

    申请日:2014-06-05

    Abstract: An organic light emitting display apparatus includes: a plurality of emission pixels arranged in a matrix of a plurality of rows and a plurality of columns, wherein the emission pixels each comprise a light emitting diode (LED); a plurality of dummy pixels; a plurality of repair lines, wherein at least one of the plurality of emission pixels is coupled to at least one of the plurality of dummy pixels through one of the repair lines; and at least one auxiliary repair line coupling at least two of the plurality of repair lines.

    Abstract translation: 一种有机发光显示装置,包括:排列成多行和多列的矩阵的多个发光像素,其中,所述发光像素各自包括发光二极管(LED); 多个虚拟像素; 多个修复线,其中所述多个发射像素中的至少一个通过所述修复线之一耦合到所述多个虚拟像素中的至少一个; 以及耦合所述多条修复线中的至少两条修复线的至少一条辅助修复线。

    Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate
    7.
    发明授权
    Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate 有权
    薄膜晶体管阵列基板,有机发光显示装置及薄膜晶体管阵列基板的制造方法

    公开(公告)号:US09147719B2

    公开(公告)日:2015-09-29

    申请号:US14231263

    申请日:2014-03-31

    Abstract: A thin film transistor array substrate includes: a substrate; a bottom gate electrode including a gate area doped with ion impurities and undoped areas on left and right sides of the gate area; an active layer on the bottom gate electrode with a first insulating layer therebetween and including a source contact region, a drain contact region, and an oxide semiconductor region; a top gate electrode on the active layer with a second insulating layer therebetween; and a source electrode in contact with the source contact region and a drain electrode in contact with the drain contact region, the source electrode and the drain electrode being on the top gate electrode with a third insulating layer therebetween. The oxide semiconductor region is between the source contact region and the drain contact region.

    Abstract translation: 薄膜晶体管阵列基板包括:基板; 底栅电极,其包括掺杂有离子杂质的栅极区域和在栅极区域的左侧和右侧的未掺杂区域; 底栅电极上的有源层,其间具有第一绝缘层,并且包括源极接触区域,漏极接触区域和氧化物半导体区域; 有源层上的顶栅电极,其间具有第二绝缘层; 以及与所述源极接触区域接触的源极电极和与所述漏极接触区域接触的漏极电极,所述源极电极和所述漏极电极位于所述顶部栅极电极上,在其间具有第三绝缘层。 氧化物半导体区域在源极接触区域和漏极接触区域之间。

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