公开(公告)号：US20180069129A1

公开(公告)日：2018-03-08

申请号：US15704063

申请日：2017-09-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG SU LEE ,  YOON HO KHANG ,  DONG JO KIM ,  HYUN JAE NA ,  SANG HO PARK ,  SE HWAN YU ,  CHONG SUP CHANG ,  DAE HO KIM ,  JAE NEUNG KIM ,  MYOUNG GEUN CHA ,  SANG GAB KIM ,  YU-GWANG JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20140175429A1

公开(公告)日：2014-06-26

申请号：US14070886

申请日：2013-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： DONG JO KIM ,  Ji Seon Lee ,  Jong Chan Lee ,  Yoon Ho Khang ,  Sang Ho Park ,  Yong Su Lee ,  Jung Kyu Lee

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288

Abstract: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

Abstract translation: 薄膜晶体管阵列面板可以包括在半导体层中形成的氧化物半导体的沟道层，形成在半导体层中并连接到第一侧的沟道层的源电极，形成在半导体层中的漏电极和 连接到相对的第二侧的沟道层，形成在与漏电极的半导体层相同的部分中的半导体层中的像素电极，设置在沟道层上的绝缘层，设置在栅电极上的栅极线 绝缘层，设置在源电极和漏电极上的钝化层，像素电极和栅极线以及设置在钝化层上的数据线。 沟道层的宽度可以基本上等于像素电极在与栅极线平行的方向上的宽度。

公开(公告)号：US20160308063A1

公开(公告)日：2016-10-20

申请号：US15194841

申请日：2016-06-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG SU LEE ,  YOON HO KHANG ,  DONG JO KIM ,  HYUN JAE NA ,  SANG HO PARK ,  SE HWAN YU ,  CHONG SUP CHANG ,  DAE HO KIM ,  JAE NEUNG KIM ,  MYOUNG GEUN CHA ,  SANG GAB KIM ,  YU-GWANG JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20150214380A1

公开(公告)日：2015-07-30

申请号：US14678448

申请日：2015-04-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG SU LEE ,  YOON HO KHANG ,  DONG JO KIM ,  HYUN JAE NA ,  SANG HO PARK ,  SE HWAN YU ,  CHONG SUP CHANG

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract translation: 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。