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1.
公开(公告)号:US10910406B2
公开(公告)日:2021-02-02
申请号:US16381495
申请日:2019-04-11
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jaewoo Jeong , Taewook Kang , Jongoh Seo , Byungsoo So
IPC: H01L27/12
Abstract: A display apparatus includes a substrate including a polymer resin. A portion of the substrate including an upper surface of the substrate is doped with 1×1020 to 1×1023 dopants per 1 cm3. A barrier layer is positioned above the upper surface of the substrate. A buffer layer is positioned above the barrier layer. A thin film transistor is positioned above the buffer layer. A display device is electrically connected to the thin film transistor.
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公开(公告)号:US20190115440A1
公开(公告)日:2019-04-18
申请号:US16157155
申请日:2018-10-11
Applicant: Samsung Display Co., Ltd.
Inventor: Dongsung Lee , Cheolho Park , Jongoh Seo , Byungsoo So , Dongmin Lee
Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.
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公开(公告)号:US11664224B2
公开(公告)日:2023-05-30
申请号:US17819616
申请日:2022-08-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongjun Baek , Jaewoo Jeong , Byungsoo So
IPC: H01L21/02 , H01L21/225 , H01L27/32 , H01L29/66 , H01L51/00
CPC classification number: H01L21/02675 , H01L21/2253 , H01L27/3244 , H01L29/66757 , H01L51/0097 , H01L2227/323
Abstract: A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.
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公开(公告)号:US20230128109A1
公开(公告)日:2023-04-27
申请号:US17715553
申请日:2022-04-07
Applicant: Samsung Display Co., Ltd.
Inventor: Dongmin Lee , Jaewoo Jeong , Janghyun Kim , Jongoh Seo , Byungsoo So
Abstract: A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.
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5.
公开(公告)号:US11556002B2
公开(公告)日:2023-01-17
申请号:US16802011
申请日:2020-02-26
Applicant: Samsung Display Co., Ltd.
Inventor: Jihwan Kim , Jongjun Baek , Byungsoo So , Hiroshi Okumura
IPC: G02B26/12 , G02F1/07 , H01L21/67 , H01L21/02 , B23K26/354 , B23K26/064 , B23K26/082
Abstract: Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.
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公开(公告)号:US20210091201A1
公开(公告)日:2021-03-25
申请号:US17113777
申请日:2020-12-07
Applicant: Samsung Display Co., Ltd.
Inventor: Dongsung Lee , Cheolho Park , Jongoh Seo , Byungsoo So , Dongmin Lee
Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.
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公开(公告)号:US20250031524A1
公开(公告)日:2025-01-23
申请号:US18584942
申请日:2024-02-22
Applicant: Samsung Display Co., Ltd.
Inventor: Hyuneok Shin , Yunjong Yeo , Byungsoo So , Seungyong Song , Keunho Jang
IPC: H10K59/122 , H10K59/12 , H10K59/80
Abstract: A display apparatus includes: a first and second sub-pixel electrodes spaced apart from each other; a subpixel-defining layer covering edges of the first and second sub-pixel electrodes; a first stack including a first emission layer and a first opposite electrode, on the subpixel-defining layer, and overlapping the first sub-pixel electrode; a second stack including a second emission layer and a second opposite electrode, on the subpixel-defining layer, and overlapping the second sub-pixel electrode; a first encapsulation layer covering each of edges of the first stack and edges of the second stack, and including first openings overlapping each of the first stack and the second stack, and a second opening between the first stack and the second stack; and a common electrode on the first encapsulation layer and electrically connected to the first opposite electrode of the first stack and the second opposite electrode of the second stack.
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公开(公告)号:US12002868B2
公开(公告)日:2024-06-04
申请号:US17113777
申请日:2020-12-07
Applicant: Samsung Display Co., Ltd.
Inventor: Dongsung Lee , Cheolho Park , Jongoh Seo , Byungsoo So , Dongmin Lee
CPC classification number: H01L29/458 , H01L27/124 , H01L29/401 , H01L29/4908 , H10K10/82 , H10K10/84 , H10K71/236 , H10K71/621 , Y10S438/937
Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.
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9.
公开(公告)号:US11672164B2
公开(公告)日:2023-06-06
申请号:US17077648
申请日:2020-10-22
Applicant: Samsung Display Co., Ltd.
Inventor: Minkyung Kang , Byungsoo So , Jaewoo Jeong , Jongjun Baek , Hiroshi Okumura
CPC classification number: H01L51/0097 , H01L27/3244 , H01L51/56 , H01L2251/5338
Abstract: A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.
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10.
公开(公告)号:US11430839B2
公开(公告)日:2022-08-30
申请号:US16843368
申请日:2020-04-08
Applicant: Samsung Display Co., Ltd.
Inventor: Jongjun Baek , Jaewoo Jeong , Byungsoo So
IPC: H01L27/32 , H01L29/66 , H01L51/00 , H01L21/02 , H01L21/225
Abstract: A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.
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