MANUFACTURING METHOD OF DISPLAY DEVICE AND MANUFACTURING DEVICE OF DISPLAY DEVICE

    公开(公告)号:US20240286165A1

    公开(公告)日:2024-08-29

    申请号:US18406431

    申请日:2024-01-08

    CPC classification number: B05C5/0291 B05D1/02

    Abstract: A manufacturing method of a display device includes forming a first droplet on a first region of a substrate by nozzles, moving the nozzles onto a second region of the substrate spaced apart in a first direction from the first region, forming a second droplet on the second region, calculating a first distance between the first and second droplets, moving the nozzles onto a third region of the substrate spaced apart in a direction opposite to the first direction from the second region, forming a third droplet on the third region, moving the nozzles onto a fourth region of the substrate spaced apart in the first direction from the third region, forming a fourth droplet on the fourth region, calculating a second distance between the third and the fourth droplets, and calculating a jetting velocity of each of the nozzles based on the first distance and the second distance.

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210343816A1

    公开(公告)日:2021-11-04

    申请号:US17111897

    申请日:2020-12-04

    Abstract: An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.

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