公开(公告)号：US20230292553A1

公开(公告)日：2023-09-14

申请号：US18321413

申请日：2023-05-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SANGJIN PARK ,  YOUNGDAE KIM ,  JEONGSEON KIM ,  SANGJIN LEE ,  AHYEON LEE

IPC: H10K59/121 ,  G09G3/3233 ,  H10K71/00

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K71/00 ,  G09G2300/0819 ,  G09G2320/0257 ,  H01L27/1237

Abstract: An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.

公开(公告)号：US20210343816A1

公开(公告)日：2021-11-04

申请号：US17111897

申请日：2020-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SANGJIN PARK ,  YOUNGDAE KIM ,  JEONGSEON KIM ,  SANGJIN LEE ,  AHYEON LEE

IPC: H01L27/32 ,  H01L51/56 ,  G09G3/3233

Abstract: An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.