公开(公告)号：US20230215983A1

公开(公告)日：2023-07-06

申请号：US18093959

申请日：2023-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Yun Hyuk KO ,  Dong Uk KIM ,  Na Ri AHN ,  Chang Hee LEE ,  Do Hyung KIM ,  Ran KIM ,  In Pyo KIM ,  Ki Young YEON ,  Je Won YOO ,  Joo Hee LEE ,  Sang Ho JEON ,  Jung Woon JUNG ,  Chan Woo JOO ,  Jin Young CHOI ,  Na Mi HONG ,  Jong Il KIM ,  Jin Ho BYUN ,  Sang Ho OH ,  Jae Kwang LEE ,  Yong Seok CHOI ,  Jong Hoon HA

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016

Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.

公开(公告)号：US20220158030A1

公开(公告)日：2022-05-19

申请号：US17479980

申请日：2021-09-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Mi Hyang SHEEN ,  Ki Young YEON ,  Do Hyung KIM ,  Kyung Lae RHO ,  Na Ri AHN

IPC: H01L33/24 ,  H01L33/00 ,  H01L25/075 ,  H01L33/12

Abstract: A method of manufacturing a light-emitting element, and a light-emitting element array substrate and a display device including the same are provided. A method of manufacturing a light-emitting element includes: forming a base substrate including a plurality of protrusions and a rod area which is a remaining area except for the plurality of protrusions; forming a buffer layer on the base substrate; forming a semiconductor structure including a first semiconductor material layer, a light-emitting material layer, and a second semiconductor material layer on the buffer layer; forming a plurality of mask patterns overlapping the rod area on the semiconductor structure; forming element rods by removing the semiconductor structure overlapping the plurality of protrusions using the plurality of mask patterns; forming an insulating film around an outer surface of each of the element rods. and separating the element rods from the buffer layer.

公开(公告)号：US20240170614A1

公开(公告)日：2024-05-23

申请号：US18459325

申请日：2023-08-31

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Dong Uk KIM ,  Kwan Jae LEE ,  Bo Hwa KIM ,  Dong Youn YOO ,  Hyeong Su CHOI

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/24 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/502 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: A light-emitting element comprises a first semiconductor layer, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, an electrode layer provided on the second semiconductor layer, and an insulating film around outer peripheral surfaces of the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, wherein the active layer includes a cover layer including a plurality of quantum dots, and the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer are sequentially stacked in one direction to form a shape of a rod.

公开(公告)号：US20240234383A1

公开(公告)日：2024-07-11

申请号：US18363100

申请日：2023-08-01

Applicant: Samsung Display Co., LTD.

Inventor： Sang Hyung LIM ,  Mi Hyang SHEEN

IPC: H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/06 ,  H01L2933/0041

Abstract: A method of manufacturing a light emitting element, comprising patterning a first base area of a growth base, forming semiconductor layers, and patterning a portion of a second base area of the growth base, different from the first base area. A resulting light emitting element, and a display device including such a light emitting element are included.

公开(公告)号：US20230170441A1

公开(公告)日：2023-06-01

申请号：US17997519

申请日：2021-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Sang Hyung LIM ,  Myeong Kyu PARK ,  Na Ri AHN ,  Doo Hyoung LEE

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/60 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/60 ,  H01L33/62

Abstract: Provided are a light emitting device and a display apparatus comprising the same. The light emitting device comprises a light emitting device core extending in one direction, and a transmission filter layer surrounding a part of the side surface of the light emitting device core, wherein the side surface of the light emitting device core comprises a first area having the transmission filter layer arranged therein, and a second area not having the transmission filter layer arranged therein.

公开(公告)号：US20210296422A1

公开(公告)日：2021-09-23

申请号：US17089246

申请日：2020-11-04

Applicant: Samsung Display Co., LTD.

Inventor： Sang Hyung LIM ,  Jee Hoon KIM ,  Mi Hyang SHEEN ,  Jin Ho JANG ,  Myeong Kyu PARK ,  Na Ri AHN ,  Hui Won YANG ,  Doo Hyoung LEE

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a first conductive pattern on a substrate, a first insulating layer on the first conductive pattern, a semiconductor pattern on the first insulating layer, a second insulating layer on the first insulating layer and the semiconductor pattern, and a second conductive pattern on the second insulating layer. A first edge of the first conductive pattern faces a second edge of the second conductive pattern, the first conductive pattern does not overlap the second conductive pattern in an area where the first edge faces the second edge, the semiconductor pattern is in the area where the first edge faces the second edge, the second conductive pattern overlaps the second insulating layer, and the second insulating layer includes a third edge protruding from the second edge of the second conductive pattern.