DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20220320216A1

    公开(公告)日:2022-10-06

    申请号:US17592965

    申请日:2022-02-04

    Abstract: A display device comprises a repair circuit, and a repair circuit connection pattern extending across a pixel and the repair circuit. Each of a first and second subpixels comprises a light emitting element, a first transistor connected thereto, and a second transistor connected to a gate electrode of the first transistor. The repair circuit comprises first and second repair transistors connected to a gate electrode of the first repair transistor. A first source/drain electrode of the first transistor of each of the first and second subpixels is connected to the power line, a second source/drain electrode of the first transistor of each of the first and second subpixels overlaps the repair circuit connection pattern. A first source/drain electrode of the first repair transistor is connected to the power line, and a second source/drain electrode of the first repair transistor overlaps the first repair circuit connection pattern.

    DISPLAY DEVICE
    2.
    发明申请

    公开(公告)号:US20210151497A1

    公开(公告)日:2021-05-20

    申请号:US16998470

    申请日:2020-08-20

    Abstract: A display device includes a substrate; a semiconductor layer disposed on the substrate; a gate insulating film disposed on the semiconductor layer; a gate layer disposed on the gate insulating film and insulated from the semiconductor layer; an insulating film disposed on the semiconductor layer and the gate layer; and a metal layer disposed on the insulating film, wherein the semiconductor layer and the gate layer are electrically connected through the metal layer, and the semiconductor layer overlaps the gate layer in a plan view.

    DISPLAY DEVICE
    3.
    发明申请

    公开(公告)号:US20210134923A1

    公开(公告)日:2021-05-06

    申请号:US16915426

    申请日:2020-06-29

    Abstract: A display device includes a substrate which includes a display area and a non-display area, a transistor disposed in the display area, a pad disposed in the non-display area, and an insulating layer which is disposed on the transistor and defines an opening which overlaps the pad in a plan view. The pad includes a main layer, a first auxiliary layer on the main layer, and a second auxiliary layer on the first auxiliary layer, and the second auxiliary layer defines the opening.

    DISPLAY DEVICE
    4.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230354664A1

    公开(公告)日:2023-11-02

    申请号:US18118308

    申请日:2023-03-07

    Abstract: A display device includes a substrate, an emission layer disposed on the substrate, and a plurality of signal lines disposed on the substrate, electrically connected to the emission layer, and including a first signal line. The first signal line includes a first layer including a refractory metal, a second layer disposed on the first layer and including a low-resistance metal, a third layer disposed on the second layer and including a first metal oxide, and a fourth layer disposed on the third layer and including a second metal oxide, and the first metal oxide of the third layer includes the low-resistance metal of the second layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250024710A1

    公开(公告)日:2025-01-16

    申请号:US18616218

    申请日:2024-03-26

    Abstract: A display device is disclosed that includes a substrate, a first metal layer disposed on the substrate, an active layer disposed on the first metal layer, a second metal layer disposed on the active layer, a third metal layer disposed on the second metal layer, a fourth metal layer disposed on the third metal layer, and a transistor and a capacitor disposed on the substrate. The transistor includes a gate electrode disposed in at least any one of the first metal layer and the second metal layer, and a drain electrode, a source electrode and an active region disposed in the active layer, The capacitor includes a first capacitor including a first electrode disposed in the first metal layer and a second electrode disposed in the second metal layer, a second capacitor including the second electrode and a third electrode disposed in the third metal layer, and a third capacitor including the third electrode and a fourth electrode disposed in the fourth metal layer.

    TRANSISTOR PANEL HAVING A GOOD INSULATION PROPERTY AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190157459A1

    公开(公告)日:2019-05-23

    申请号:US16235779

    申请日:2018-12-28

    Abstract: A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF

    公开(公告)号:US20180102383A1

    公开(公告)日:2018-04-12

    申请号:US15601338

    申请日:2017-05-22

    Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240122006A1

    公开(公告)日:2024-04-11

    申请号:US18238550

    申请日:2023-08-28

    CPC classification number: H10K59/131 H10K59/1201 H10K59/122

    Abstract: A display device includes a data conductive layer including a first power line, a passivation layer with a first opening exposing the first power line, a via layer with a second opening partially overlapping the first opening, a pixel electrode on the via layer, a connection electrode in the first and second openings, a pixel-defining film with an opening overlapping the second opening, a light-emitting layer on the pixel-defining film, the pixel electrode and the connection electrode, and a common electrode connected to the first power line. The data conductive layer includes a data base layer, a data main metal layer, and a data capping layer, the first power line includes a wire connection structure, in which the data main metal layer is recessed from sides of the data capping layer, and the common electrode is connected to the data main metal layer in the wire connection structure.

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