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    Laser processing apparatus
    1.
    发明授权
    Laser processing apparatus 有权

    公开(公告)号：US12050305B2

    公开(公告)日：2024-07-30

    申请号：US17361560

    申请日：2021-06-29

    Applicant: Samsung Display Co., Ltd.

    Inventor： Emil Aslanov ,  Je Kil Ryu ,  Hae Sook Lee ,  Kyung Hoon Chung ,  Gyoo Wan Han

    IPC: B23K26/06 ,  B23K26/082 ,  G02B13/00 ,  G02B26/10 ,  G02B27/10

    CPC classification number: G02B13/0005 ,  B23K26/0643 ,  B23K26/082 ,  G02B26/101 ,  G02B26/105 ,  G02B27/106

    Abstract: A laser processing apparatus includes a laser source which generates a laser beam; a scanner unit disposed in an optical path of the laser beam from the laser source and which adjusts the optical path of the laser beam from the laser source in a first direction or in a second direction different from the first direction; and a reflector unit disposed in an optical path of the laser beam adjusted by the scanner unit and which reflects the laser beam adjusted by the scanner unit, where the reflector unit includes a first sub-reflector unit which shifts an optical path of the laser adjusted by the scanner unit in the first direction, and a second sub-reflector unit which shifts an optical path of the laser beam adjusted by the scanner unit in a third direction opposite to the first direction.

    Method of excimer laser annealing
    3.
    发明授权
    Method of excimer laser annealing 有权
    准分子激光退火方法

    公开(公告)号：US09564322B1

    公开(公告)日：2017-02-07

    申请号：US15163346

    申请日：2016-05-24

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Gyoo Wan Han ,  Vladimir Tokarev ,  Je Kil Ryu

    IPC: H01L21/02

    CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691

    Abstract: A method of excimer laser annealing includes generating a focused long line beam with a laser beam output from at least one laser source; and scanning the long line beam in a direction perpendicular to a long axis of the long line beam along a surface of an amorphous semiconductor film on a substrate. The long line beam has a normalized beam angular divergence half-width φ=arctan(tan θy/sin θ) that is less than a critical value φc, where θy represents a beam angular divergence half-width measured along the long axis of the long line beam on the surface of the amorphous semiconductor film, θ represents a mean incidence angle of the long line beam on the surface of the amorphous semiconductor film, and φc is approximately 30°.

    Abstract translation: 准分子激光退火的方法包括：从至少一个激光源输出的激光束产生聚焦的长线束; 并且沿着与长条线束的长轴垂直的方向沿着衬底上的非晶半导体膜的表面扫描长线束。 长线光束具有小于临界值φc的归一化光束角度发散半角φ= arctan（tanθy/sinθ），其中θy表示沿长轴测量的光束角度发散半角 在非晶半导体膜的表面上的线束，θ表示非线性半导体膜表面上的长线光束的平均入射角，φc约为30°。

    Laser processing apparatus
    6.
    发明授权
    Laser processing apparatus 有权

    公开(公告)号：US11079571B2

    公开(公告)日：2021-08-03

    申请号：US15793698

    申请日：2017-10-25

    Applicant: Samsung Display Co. Ltd.

    Inventor： Emil Aslanov ,  Je Kil Ryu ,  Hae Sook Lee ,  Kyung Hoon Chung ,  Gyoo Wan Han

    IPC: G02B13/00 ,  B23K26/06 ,  G02B26/10 ,  B23K26/082 ,  G02B27/10

    Abstract: A laser processing apparatus includes a laser source which generates a laser beam; a scanner unit disposed in an optical path of the laser beam from the laser source and which adjusts the optical path of the laser beam from the laser source in a first direction or in a second direction different from the first direction; and a reflector unit disposed in an optical path of the laser beam adjusted by the scanner unit and which reflects the laser beam adjusted by the scanner unit, where the reflector unit includes a first sub-reflector unit which shifts an optical path of the laser adjusted by the scanner unit in the first direction, and a second sub-reflector unit which shifts an optical path of the laser beam adjusted by the scanner unit in a third direction opposite to the first direction.

    Method for cutting substrate
    7.
    发明授权
    Method for cutting substrate 有权
    切割基材的方法

    公开(公告)号：US09299613B2

    公开(公告)日：2016-03-29

    申请号：US14324825

    申请日：2014-07-07

    Applicant: Samsung Display Co., Ltd. ,  Philoptics Co., Ltd.

    Inventor： Il Young Jeong ,  Tae Yong Kim ,  Cheol Lae Roh ,  Je Kil Ryu ,  Jeong Hun Woo ,  Gyoo Wan Han ,  Ki Su Han ,  Tae Hyoung Cho ,  Jong Nam Moon

    IPC: H01L21/78 ,  C03B33/09 ,  C03B33/02 ,  C03B33/07 ,  C03B33/08 ,  B23K26/06 ,  B23K26/38

    CPC classification number: B44C1/228 ,  B23K26/0626 ,  B23K26/38 ,  C03B33/0222 ,  C03B33/07 ,  C03B33/082 ,  C03B33/091 ,  H01L21/78

    Abstract: A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.

    Abstract translation: 一种用于切割衬底的方法包括：作为第一激光辐射处理的一部分，朝向衬底的表面辐射激光，以在衬底中形成第一凹槽。 朝向表面辐射激光包括依次将激光朝向第一外部点（FOP），第二外部点（SOP），第一中间点（FIP），第二中间点（SIP）和第一外部点 切割点（FCP），每个点彼此间隔开一个或多个距离。 FCP对应于基板的切割线。 FOP和SOP分别设置在FCP的侧面。 FIP位于FCP和FOP之间。 SIP位于FCP和SOP之间。 相同种类和强度的激光辐射到每个点。

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