公开(公告)号：US20210104590A1

公开(公告)日：2021-04-08

申请号：US16915049

申请日：2020-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US20210057457A1

公开(公告)日：2021-02-25

申请号：US16890756

申请日：2020-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US20200161477A1

公开(公告)日：2020-05-21

申请号：US16752126

申请日：2020-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun LIM ,  Joon Seok PARK ,  Jay Bum KIM ,  Jun Hyung LIM ,  Kyoung Seok SON

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US20180069132A1

公开(公告)日：2018-03-08

申请号：US15691207

申请日：2017-08-30

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun LIM ,  Joon Seok PARK ,  Jay Bum KIM ,  Jun Hyung LIM ,  Kyoung Seok SON

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78648 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US20230255077A1

公开(公告)日：2023-08-10

申请号：US18135550

申请日：2023-04-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myoung Hwa KIM ,  Jay Bum KIM ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H10K59/131 ,  G09G3/3258 ,  G09G3/3291 ,  H10K50/80 ,  H10K59/124 ,  H10K71/00

CPC classification number: H10K59/1315 ,  G09G3/3258 ,  G09G3/3291 ,  H10K50/80 ,  H10K59/124 ,  H10K71/00 ,  H10K59/1201

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US20210143239A1

公开(公告)日：2021-05-13

申请号：US17002113

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Sun Hee LEE ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.

公开(公告)号：US20220293640A1

公开(公告)日：2022-09-15

申请号：US17831285

申请日：2022-06-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US20210305354A1

公开(公告)日：2021-09-30

申请号：US17344860

申请日：2021-06-10

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myoung Hwa KIM ,  Jay Bum KIM ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  G09G3/3258 ,  G09G3/3291 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US20210050398A1

公开(公告)日：2021-02-18

申请号：US16877977

申请日：2020-05-19

Applicant: Samsung Display Co., LTD.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56 ,  H01L29/786

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a first conductive layer on a first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, and a second conductive layer on the second interlayer insulating film and including a first and a second source/drain electrode, and a second electrode of the capacitor, the second electrode of the capacitor is in a trench structure in which the second interlayer insulating film is partially removed.

公开(公告)号：US20180175076A1

公开(公告)日：2018-06-21

申请号：US15842424

申请日：2017-12-14

Applicant: Samsung Display Co., Ltd.

Inventor： Eok Su KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L29/786

Abstract: A transistor array panel according to an exemplary embodiment includes: a substrate; a first buffer layer positioned on the substrate; and a first transistor and a second transistor positioned on the substrate and separated from each other, wherein the first transistor includes a polycrystalline semiconductor positioned on the substrate, and a first gate electrode overlapping the polycrystalline semiconductor, the second transistor includes an oxide semiconductor positioned on the first buffer layer, and a second gate electrode overlapping the oxide semiconductor, the first buffer layer covers the first gate electrode, and the first buffer layer includes a silicon oxide.