公开(公告)号：US20220293640A1

公开(公告)日：2022-09-15

申请号：US17831285

申请日：2022-06-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US20210050398A1

公开(公告)日：2021-02-18

申请号：US16877977

申请日：2020-05-19

Applicant: Samsung Display Co., LTD.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56 ,  H01L29/786

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a first conductive layer on a first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, and a second conductive layer on the second interlayer insulating film and including a first and a second source/drain electrode, and a second electrode of the capacitor, the second electrode of the capacitor is in a trench structure in which the second interlayer insulating film is partially removed.

公开(公告)号：US20210143239A1

公开(公告)日：2021-05-13

申请号：US17002113

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Sun Hee LEE ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.

公开(公告)号：US20250089454A1

公开(公告)日：2025-03-13

申请号：US18629271

申请日：2024-04-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Jun JEONG ,  Kwang Soo KO ,  Myeong Ho KIM ,  Yeon Keon MOON ,  Hyun Mo LEE ,  Kun Hee JO

IPC: H10K59/121 ,  H10K59/12

Abstract: A display device includes a substrate including a display area and a driving circuit area, a first transistor in the display area, and including a first active layer on the substrate and a first gate electrode on the first active layer, a first gate insulating layer between the first active layer and the first gate electrode, and entirely covering the first active layer, a second transistor in the driving circuit area, and including a second active layer on the substrate and a second gate electrode on the second active layer, a second gate insulating layer between the second active layer and the second gate electrode, covering a part of the second active layer overlapping the second gate electrode, and exposing another part of the second active layer, and a first oxide semiconductor layer between the first gate insulating layer and the first gate electrode.

公开(公告)号：US20250081728A1

公开(公告)日：2025-03-06

申请号：US18620407

申请日：2024-03-28

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Tae KIM ,  Myeong Ho KIM ,  Myoung Hwa KIM ,  Yeon Keon MOON

IPC: H10K59/121 ,  H10K59/12 ,  H10K59/131

Abstract: A display device includes a substrate, a first transistor including a first bottom gate electrode disposed on the substrate, a first active layer disposed on the first bottom gate electrode and including a first channel region, a first drain region, and a first source region, and a first top gate electrode disposed on a portion of the first active layer including the first channel region, a first insulating layer disposed between the first bottom gate electrode and the first active layer, and a second insulating layer disposed between the first active layer and the first top gate electrode. The second insulating layer includes: a first portion disposed on a portion of the first active layer including the first channel region and having a first thickness and a second portion disposed on a remaining portion of the first active layer and having a second thickness smaller than the first thickness.

公开(公告)号：US20230090058A1

公开(公告)日：2023-03-23

申请号：US17836386

申请日：2022-06-09

Applicant: Samsung Display Co., Ltd.

Inventor： Myeong Ho KIM ,  Jay Bum KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: Provided is display device comprising a substrate; a first semiconductor layer disposed on the substrate and having a plurality of transistors; a second semiconductor layer disposed on the first semiconductor layer and having a plurality of transistors; a first data conductive layer disposed on the second semiconductor layer; a first metal layer disposed on the first data conductive layer; and a second metal layer disposed on the first metal layer, wherein the first metal layer includes a first storage electrode and a first input electrode, the second metal layer includes a second storage electrode and a second input electrode, the first storage electrode and the second storage electrode configure a storage capacitor, and the first input electrode and the second input electrode configure an input capacitor.

公开(公告)号：US20220262883A1

公开(公告)日：2022-08-18

申请号：US17735617

申请日：2022-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US20210066421A1

公开(公告)日：2021-03-04

申请号：US15930650

申请日：2020-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myeong Ho KIM ,  Jay Bum KIM ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L51/56

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, a second semiconductor layer on the first gate insulating film and at a different layer from the first semiconductor layer, a second gate insulating film on the first conductive layer and the second semiconductor layer, a second conductive layer on the second gate insulating film and including a second gate electrode and a second electrode of the capacitor, a second interlayer insulating film on the second conductive layer, and a third conductive layer on the second interlayer insulating film and including a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode.

公开(公告)号：US20220165832A1

公开(公告)日：2022-05-26

申请号：US17467418

申请日：2021-09-06

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Duck Kyun CHOI ,  Myeong Ho KIM ,  Jun Hyung LIM

IPC: H01L27/32 ,  G09G3/3233 ,  H01L27/02

Abstract: A display device includes a light emitting element, a first transistor, a second transistor, and a diode. The first transistor may control a driving current flowing to the light emitting element depending on a voltage applied to a gate electrode of the first transistor. The second transistor is electrically connected between the gate electrode of the first transistor and a first electrode of the first transistor. A first electrode of the diode is electrically connected to a first electrode of the second transistor. A second electrode of the diode is electrically connected to the gate electrode of the first transistor.

公开(公告)号：US20210104590A1

公开(公告)日：2021-04-08

申请号：US16915049

申请日：2020-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.