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公开(公告)号：US11611030B2
公开(公告)日：2023-03-21
申请号：US16977666
申请日：2019-02-15
发明人： Masahiro Adachi , Makoto Kiyama , Takashi Matsuura , Yoshiyuki Yamamoto , Do-Gyun Byeon , Tsunehiro Takeuchi
摘要： A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.
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公开(公告)号：US11282997B2
公开(公告)日：2022-03-22
申请号：US16620048
申请日：2018-04-18
摘要： A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.
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公开(公告)号：US12029127B2
公开(公告)日：2024-07-02
申请号：US17620742
申请日：2020-06-19
IPC分类号： H10N10/855 , G01J1/02 , H10N10/17
CPC分类号： H10N10/8552 , G01J1/0252 , H10N10/17
摘要： A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.
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公开(公告)号：US11898903B2
公开(公告)日：2024-02-13
申请号：US17437839
申请日：2020-04-13
IPC分类号： H10N10/17 , H10N10/851 , G01J1/02
CPC分类号： G01J1/0252 , H10N10/17 , H10N10/851
摘要： An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 μm or more.
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公开(公告)号：US11737364B2
公开(公告)日：2023-08-22
申请号：US16981586
申请日：2018-12-28
发明人： Masahiro Adachi , Kotaro Hirose , Makoto Kiyama , Takashi Matsuura , Yoshiyuki Yamamoto , Tsunehiro Takeuchi , Shunsuke Nishino
IPC分类号： H01L35/16 , H10N10/852 , C01B19/04 , G01J5/12 , H10N10/857
CPC分类号： H10N10/852 , C01B19/04 , G01J5/12 , H10N10/857
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
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公开(公告)号：US11716903B2
公开(公告)日：2023-08-01
申请号：US17262980
申请日：2019-07-04
IPC分类号： H10N10/17 , B22F9/00 , H10N10/01 , H10N10/81 , H10N10/851
CPC分类号： H10N10/17 , B22F9/002 , H10N10/01 , H10N10/81 , H10N10/851
摘要： A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.
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公开(公告)号：US11462670B2
公开(公告)日：2022-10-04
申请号：US16328300
申请日：2017-08-29
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
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公开(公告)号：US12035630B2
公开(公告)日：2024-07-09
申请号：US17633578
申请日：2020-07-15
IPC分类号： H10N10/852 , G01J5/12 , H10N10/17
CPC分类号： H10N10/852 , G01J5/12 , H10N10/17
摘要： A thermoelectric conversion material is represented by a composition formula Ag2-xαxS, where α is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.
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公开(公告)号：US11832519B2
公开(公告)日：2023-11-28
申请号：US17637805
申请日：2020-09-16
IPC分类号： H10N10/851 , C22C28/00 , C22C45/00 , H10N10/857
CPC分类号： H10N10/851 , C22C28/00 , C22C45/00 , H10N10/857 , C22C2200/02
摘要： A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.
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公开(公告)号：US20210384397A1
公开(公告)日：2021-12-09
申请号：US17399611
申请日：2021-08-11
IPC分类号： H01L35/26 , G01J5/12 , H01L27/16 , H01L35/08 , H01L35/16 , H01L35/22 , H01L35/32 , H01L35/34
摘要： A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.
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