公开(公告)号：US20250040244A1

公开(公告)日：2025-01-30

申请号：US18776143

申请日：2024-07-17

Applicant: STMicroelectronics International N.V.

Inventor： Riccardo DEPETRO

IPC: H01L27/095 ,  H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor electronic device is formed in a die having a substrate of semiconductor material of a first conductivity type. The device has a first electronic component based on heterostructure, which has a body structure of semiconductor material that extending, in the die, on the substrate, and an epitaxial multilayer extending in contact with the body structure and having a heterostructure. The body structure of the first electronic component has a first doped region of semiconductor material that extends between the heterostructure and the substrate and has a second conductivity type different from the first conductivity type.

公开(公告)号：US20250040210A1

公开(公告)日：2025-01-30

申请号：US18776141

申请日：2024-07-17

Applicant: STMicroelectronics International N.V.

Inventor： Riccardo DEPETRO

IPC: H01L29/205 ,  H01L21/02 ,  H01L21/762 ,  H01L29/20 ,  H01L29/778

Abstract: A semiconductor electronic device has a substrate region of semiconductor material; a first electronic component based on heterostructure, which has an epitaxial multilayer that extends on the substrate region and includes a heterostructure; and a separation region that extends on the substrate region. The separation region includes a polycrystalline region of semiconductor material of polycrystalline type which is arranged, along a first direction, alongside the epitaxial multilayer. The electronic device also has an epitaxial region of a single semiconductor material of monocrystalline type which extends on the substrate region. The polycrystalline region extends, along the first direction, between the epitaxial multilayer and the epitaxial region.

公开(公告)号：US20250040163A1

公开(公告)日：2025-01-30

申请号：US18776146

申请日：2024-07-17

Applicant: STMicroelectronics International N.V.

Inventor： Riccardo DEPETRO

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/778

Abstract: For manufacturing a semiconductor electronic device a wafer is provided which has a substrate layer of semiconductor material having a first portion and a second portion distinct from the first portion. An epitaxial region of a single semiconductor material is grown on the first portion of the substrate layer. An epitaxial multilayer having a heterostructure is grown on the second portion of the substrate layer. A first electronic component based on the single semiconductor material is formed from the epitaxial region and a second electronic component based on heterostructure is formed from the heterostructure. Forming a first electronic component comprises forming a plurality of doped regions in the epitaxial region, after the step of growing an epitaxial multilayer.

公开(公告)号：US20250040204A1

公开(公告)日：2025-01-30

申请号：US18774272

申请日：2024-07-16

Applicant: STMicroelectronics International N.V.

Inventor： Giuseppe Pio PISA ,  Riccardo DEPETRO

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: Electronic device, comprising: a semiconductor body having a surface, an electrical conductivity P and a first doping value; at least one gate region on the surface; one or more source regions, having a second electrical conductivity N, extending in the semiconductor body at the surface and at a first side of the gate region; and at least one body contact region, of P+ type, extending in the semiconductor body at the surface and at the first side of the gate region 22. The first gate region has the shape of a stripe with main extension along a first direction. The first body contact region has a tapered shape along said first direction. The one or more source regions are adjacent to, and at least partially surround, the first body contact region.

公开(公告)号：US20250037998A1

公开(公告)日：2025-01-30

申请号：US18776142

申请日：2024-07-17

Applicant: STMicroelectronics International N.V.

Inventor： Riccardo DEPETRO

IPC: H01L21/02 ,  H01L21/033 ,  H01L27/092

Abstract: To manufacture a semiconductor electronic device a wafer is provided that has a substrate layer of semiconductor material having a first portion and a second portion distinct from the first portion. An epitaxial region of a single semiconductor material is grown on the first portion of the substrate layer. An epitaxial multilayer having a heterostructure is grown on the second portion of the substrate layer. A first electronic component based upon the single semiconductor material is formed starting from the epitaxial region and a second electronic component based upon a heterostructure is formed starting from the heterostructure. To grow an epitaxial multilayer, a growth mask is formed on the substrate layer; an opening is made in the growth mask, thereby exposing the second portion of the substrate layer; and the epitaxial multilayer is grown on the second portion of the substrate layer.