公开(公告)号：US20250159906A1

公开(公告)日：2025-05-15

申请号：US18935091

申请日：2024-11-01

Applicant: STMicroelectronics International N.V.

Inventor： Alain OSTROVSKY ,  Jerome DUBOIS ,  Latifa DESVOIVRES ,  Simon JEANNOT ,  Christian BOCCACCIO

IPC: H10B63/00 ,  H10B63/10 ,  H10N70/00 ,  H10N70/20

Abstract: A method manufactures a memory including at least one first phase-change memory cell, each first cell including a resistive element, a first metal layer, and a second layer made of a phase-change material, the first layer being located between the resistive element and the second layer. The method includes the forming of a level including the resistive element, the forming of a third metal layer on the level, the etching of the third layer, and then the forming of the second layer.