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    Micropump MEMS device for moving or ejecting a fluid, in particular microblower or flowmeter
    3.
    发明授权
    Micropump MEMS device for moving or ejecting a fluid, in particular microblower or flowmeter 有权

    公开(公告)号：US11560886B2

    公开(公告)日：2023-01-24

    申请号：US16847521

    申请日：2020-04-13

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Domenico Giusti ,  Lorenzo Baldo ,  Enri Duqi

    IPC: F04B43/04 ,  H01L27/20 ,  H01L41/047 ,  H01L41/09 ,  H01L41/31 ,  F04B43/02 ,  F04B45/047

    Abstract: A micropump device is formed in a monolithic semiconductor body integrating a plurality of actuator elements arranged side-by-side. Each actuator element has a first chamber extending at a distance from a first face of the monolithic body; a membrane arranged between the first face and the first chamber; a piezoelectric element extending on the first face over the membrane; a second chamber, arranged between the first chamber and a second face of the monolithic body; a fluidic inlet path fluidically connecting the second chamber with the outside of the monolithic body; and a fluid outlet opening extending in a transverse direction in the monolithic body from the second face as far as the second chamber, through the first chamber. The monolithic formation of the actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.

    Micro-electro-mechanical device having two buried cavities and manufacturing process thereof
    4.
    发明授权
    Micro-electro-mechanical device having two buried cavities and manufacturing process thereof 有权

    公开(公告)号：US11358862B2

    公开(公告)日：2022-06-14

    申请号：US16869159

    申请日：2020-05-07

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri Duqi ,  Lorenzo Baldo ,  Marco Del Sarto ,  Mikel Azpeitia Urquia

    IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/84

    Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

    PRESSURE SENSOR GENERATING A TRANSDUCED SIGNAL WITH REDUCED AMBIENT TEMPERATURE DEPENDENCE, AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    PRESSURE SENSOR GENERATING A TRANSDUCED SIGNAL WITH REDUCED AMBIENT TEMPERATURE DEPENDENCE, AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190120710A1

    公开(公告)日：2019-04-25

    申请号：US16220498

    申请日：2018-12-14

    Applicant: STMicroelectronics S.R.L.

    Inventor： Enri Duqi ,  Sebastiano Conti ,  Sonia Costantini

    IPC: G01L9/00 ,  G01L9/06 ,  B81C1/00 ,  B81B7/00

    Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

    Microelectromechanical piezoresistive pressure sensor with self-test capability and corresponding manufacturing process
    10.
    发明授权
    Microelectromechanical piezoresistive pressure sensor with self-test capability and corresponding manufacturing process 有权

    公开(公告)号：US11054327B2

    公开(公告)日：2021-07-06

    申请号：US16248415

    申请日：2019-01-15

    Applicant: STMicroelectronics S.r.l.

    Inventor： Enri Duqi ,  Lorenzo Baldo

    IPC: G01L9/00 ,  G01L27/00 ,  H01L41/113 ,  H01L41/187

    Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.

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