公开(公告)号：US20130240999A1

公开(公告)日：2013-09-19

申请号：US13872478

申请日：2013-04-29

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  NXP B.V.

Inventor： Alexandre Mondot ,  Markus Mueller ,  Thomas Kormann

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/823828 ,  H01L27/0922 ,  H01L29/4933 ,  H01L29/4975

Abstract: A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. Several devices are, thus, provided. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

Abstract translation: 在Si或SiGe表面上选择性沉积Si或SiGe的方法根据第一和第二表面区域的掺杂差异来利用物理化学表面行为的差异。 通过提供具有适当浓度范围的硼掺杂的至少一个第一表面区域，并且在低于或等于800℃的温度下在预烘烤步骤中将衬底表面暴露于清洁和钝化环境气氛，随后的沉积步骤 Si或SiGe不会导致第一表面区域中的层沉积。 该效应用于在不掺杂硼的合适浓度范围内或掺杂有另一掺杂剂的第二表面区域中选择性沉积Si或SiGe，或不掺杂。 因此，提供了几个设备。 因此，该方法节省了根据现有技术在第二表面区域中选择性沉积Si或SiGe所需的常规光刻序列。