Ring Laser Integrated with Silicon-On-Insulator Waveguide

    公开(公告)号:US20210151953A1

    公开(公告)日:2021-05-20

    申请号:US16081028

    申请日:2017-02-28

    Applicant: STC.UNM

    Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

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