公开(公告)号：US11894314B2

公开(公告)日：2024-02-06

申请号：US17447336

申请日：2021-09-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L23/552 ,  H01L23/31 ,  H01Q1/40 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/49822 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US20230081706A1

公开(公告)日：2023-03-16

申请号：US17447336

申请日：2021-09-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US12211803B2

公开(公告)日：2025-01-28

申请号：US18390051

申请日：2023-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/24 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US20230074430A1

公开(公告)日：2023-03-09

申请号：US17447029

申请日：2021-09-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/60 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.

公开(公告)号：US20240153783A1

公开(公告)日：2024-05-09

申请号：US18543992

申请日：2023-12-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/60 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/60 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/81815 ,  H01L2924/1532

Abstract: A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.

公开(公告)号：US20240128201A1

公开(公告)日：2024-04-18

申请号：US18390051

申请日：2023-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/24 ,  H01Q1/40

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/645 ,  H01L23/66 ,  H01Q1/243 ,  H01Q1/40 ,  H01L2223/6677

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US11887863B2

公开(公告)日：2024-01-30

申请号：US17447029

申请日：2021-09-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/60 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/60 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/81815 ,  H01L2924/1532

Abstract: A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.