Abstract:
A high-current vacuum system suitable for on-vacuum deposition of multiple layers onto a substrate. A vacuum chamber encloses a stationary substrate holder disposed above a plurality of vapor sources utilizing diverse heating elements. The vapor sources are arranged on a rotatable support for sequential movement to a deposition station for the vaporization and deposit of low and high temperature metals and dielectrics. Manipulators for making and breaking electrical contact to the station and for rotation of the support are positioned without the chamber and are externally operated to change sources without breaking vacuum. A liquid nitrogen cooled cold cam is situated between the station and the substrate support to funnel the vapor stream toward the stationary substrate target.
Abstract:
An apparatus for depositing thin lines of conducting, semiconducting or dielectric material on a substrate including a crucible having a vaporizable material charge receiving chamber and a vapor chamber. A first tube for introducing a flow of carrier gas and a heated capillary tube penetrate the vapor compartment. On heating the crucible to a temperature above the evaporation temperature of the charge, the charge evaporates and is pushed through the capillary tube by the carrier gas. The stream of carrier gas and vapor deposits dots or lines on the target. Patterns are produced by translating the target with respect to the crucible.