公开(公告)号：US12046594B1

公开(公告)日：2024-07-23

申请号：US18638735

申请日：2024-04-18

Applicant: SOUTHEAST UNIVERSITY

Inventor： Long Zhang ,  Weifeng Sun ,  Siyang Liu ,  Chengwu Pan ,  Guiqiang Zheng ,  Longxing Shi

IPC: H01L27/06 ,  H01L23/528 ,  H01L29/20 ,  H01L29/778 ,  H01L29/8605 ,  H01L29/872 ,  H01L49/02 ,  H02M1/08

CPC classification number: H01L27/0605 ,  H01L23/5286 ,  H01L27/0629 ,  H01L27/0635 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/8605 ,  H01L29/872 ,  H02M1/08

Abstract: In the monolithically integrated GaN-based half-bridge circuit, a nucleation layer, a buffer layer, a channel layer and a barrier layer are sequentially provided on a conductive substrate, the barrier layer and the channel layer are separated by isolation layers, and a diode, an integrated capacitor, a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are provided. The half-bridge circuit includes: a low-side transistor and a high-side transistor, wherein a drain of the low-side transistor is connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor is connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a drain of the high-side transistor and a source of the low-side transistor.