公开(公告)号：US11211415B2

公开(公告)日：2021-12-28

申请号：US16867141

申请日：2020-05-05

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Yuuji Inoue ,  Masashi Nakata

IPC: H01L27/146

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US20190214419A9

公开(公告)日：2019-07-11

申请号：US15722960

申请日：2017-10-02

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Yuuji Inoue ,  Masashi Nakata

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14656 ,  H01L27/14685

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US09780139B2

公开(公告)日：2017-10-03

申请号：US14764685

申请日：2014-12-03

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Yuuji Inoue ,  Masashi Nakata

IPC: H04N5/228 ,  H01L27/146 ,  H01L27/148 ,  H04N5/374 ,  H04N5/378 ,  H04N9/077

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14818 ,  H04N5/374 ,  H04N5/378 ,  H04N9/077

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US10680022B2

公开(公告)日：2020-06-09

申请号：US15722960

申请日：2017-10-02

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Yuuji Inoue ,  Masashi Nakata

IPC: H01L27/146

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US20190103430A1

公开(公告)日：2019-04-04

申请号：US15722960

申请日：2017-10-02

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Yuuji Inoue ,  Masashi Nakata

IPC: H01L27/146

Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

公开(公告)号：US10277847B2

公开(公告)日：2019-04-30

申请号：US14890460

申请日：2014-05-27

Applicant: SONY CORPORATION

Inventor： Masashi Nakata ,  Koji Takahashi ,  Yuuji Inoue ,  Kenji Ikeda ,  Osamu Oka ,  Yoshiro Hattori ,  Shinya Sato ,  Hideaki Kato ,  Yasuhiro Chouji ,  Emi Nishioka ,  Hiroshi Kawanobe

IPC: H04N5/369 ,  H04N5/232 ,  H01L27/146 ,  H04N9/04 ,  H04N13/00 ,  G02B7/34 ,  H04N5/225

Abstract: There is provided a solid-state imaging device including: a pixel region that includes a plurality of pixels arranged in a two-dimensional matrix pattern. Some of the plurality of pixels are configured to be phase difference detection pixels that include a photoelectric conversion section disposed on a semiconductor substrate and a light blocking film disposed above a portion of the photoelectric conversion section. In particular a location of the light blocking film for the phase difference detection pixels varies according to a location of the phase difference detection pixel. For example, the location of the light blocking film for a phase difference detection pixel positioned at a periphery of the pixel region is different than a location of the light blocking film for a phase difference detection pixel positioned in a center portion of the pixel region.