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1.发明申请公开(公告)号：US20190333946A1
公开(公告)日：2019-10-31
申请号：US16506113
申请日：2019-07-09
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
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2.发明授权公开(公告)号：US10381392B2
公开(公告)日：2019-08-13
申请号：US15886471
申请日：2018-02-01
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20180158852A1
公开(公告)日：2018-06-07
申请号：US15886471
申请日：2018-02-01
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/1469
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
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4.发明授权公开(公告)号：US09929200B2
公开(公告)日：2018-03-27
申请号：US14506843
申请日：2014-10-06
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/1469
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
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5.发明申请IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS 有权图像拾取装置，制造图像拾取装置的方法和电子装置公开(公告)号：US20150102448A1
公开(公告)日：2015-04-16
申请号：US14506843
申请日：2014-10-06
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/1469
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
Abstract translation: 提供一种图像拾取装置，包括：设置在半导体衬底的光接收区域中的多个像素之间的第一沟槽，包括受光区域和周边区域的半导体衬底，设置光接收区域 所述多个像素各自包括光电转换部; 以及设置在所述半导体衬底的周边区域中的第二沟槽，其中所述半导体衬底在设置所述第一沟槽的部分与设置所述第二沟槽的部分之间具有厚度变化。
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6.发明授权公开(公告)号：US10277847B2
公开(公告)日：2019-04-30
申请号：US14890460
申请日：2014-05-27
Applicant: SONY CORPORATION
Inventor： Masashi Nakata , Koji Takahashi , Yuuji Inoue , Kenji Ikeda , Osamu Oka , Yoshiro Hattori , Shinya Sato , Hideaki Kato , Yasuhiro Chouji , Emi Nishioka , Hiroshi Kawanobe
Abstract: There is provided a solid-state imaging device including: a pixel region that includes a plurality of pixels arranged in a two-dimensional matrix pattern. Some of the plurality of pixels are configured to be phase difference detection pixels that include a photoelectric conversion section disposed on a semiconductor substrate and a light blocking film disposed above a portion of the photoelectric conversion section. In particular a location of the light blocking film for the phase difference detection pixels varies according to a location of the phase difference detection pixel. For example, the location of the light blocking film for a phase difference detection pixel positioned at a periphery of the pixel region is different than a location of the light blocking film for a phase difference detection pixel positioned in a center portion of the pixel region.
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7.发明授权公开(公告)号：US11056524B2
公开(公告)日：2021-07-06
申请号：US16506113
申请日：2019-07-09
Applicant: Sony Corporation
Inventor： Shinya Sato
IPC: H01L27/146
Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.
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