公开(公告)号：US10277847B2

公开(公告)日：2019-04-30

申请号：US14890460

申请日：2014-05-27

Applicant: SONY CORPORATION

Inventor： Masashi Nakata ,  Koji Takahashi ,  Yuuji Inoue ,  Kenji Ikeda ,  Osamu Oka ,  Yoshiro Hattori ,  Shinya Sato ,  Hideaki Kato ,  Yasuhiro Chouji ,  Emi Nishioka ,  Hiroshi Kawanobe

IPC: H04N5/369 ,  H04N5/232 ,  H01L27/146 ,  H04N9/04 ,  H04N13/00 ,  G02B7/34 ,  H04N5/225

Abstract: There is provided a solid-state imaging device including: a pixel region that includes a plurality of pixels arranged in a two-dimensional matrix pattern. Some of the plurality of pixels are configured to be phase difference detection pixels that include a photoelectric conversion section disposed on a semiconductor substrate and a light blocking film disposed above a portion of the photoelectric conversion section. In particular a location of the light blocking film for the phase difference detection pixels varies according to a location of the phase difference detection pixel. For example, the location of the light blocking film for a phase difference detection pixel positioned at a periphery of the pixel region is different than a location of the light blocking film for a phase difference detection pixel positioned in a center portion of the pixel region.