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    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    1.
    发明申请
    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20200161354A1

    公开(公告)日：2020-05-21

    申请号：US16748564

    申请日：2020-01-21

    Applicant: Sony Corporation

    Inventor： Shoji Kobayashi ,  Yoshiharu Kudoh ,  Takuya Sano

    IPC: H01L27/146 ,  H04N5/225 ,  H04N5/374 ,  H04N5/369

    Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

    Solid-state imaging device and camera
    2.
    发明授权
    Solid-state imaging device and camera 有权

    公开(公告)号：US10468442B2

    公开(公告)日：2019-11-05

    申请号：US15932236

    申请日：2018-02-16

    Applicant: Sony Corporation

    Inventor： Yoshiharu Kudoh

    IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

    Abstract: A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.

    Solid-state imaging device and driving method of solid-state imaging device
    3.
    发明授权
    Solid-state imaging device and driving method of solid-state imaging device 有权

    公开(公告)号：US10205893B2

    公开(公告)日：2019-02-12

    申请号：US15557845

    申请日：2016-01-07

    Applicant: SONY CORPORATION

    Inventor： Yoshiharu Kudoh

    IPC: H04N5/353 ,  H01L27/146 ,  H04N5/3745

    Abstract: An imaging device of a CMOS type having a global shutter function is downsized.In the imaging device, a photoelectric conversion unit generates charge corresponding to an exposure amount in a predetermined exposure period. A generated charge retaining unit is formed to have a predetermined impurity concentration in a semiconductor substrate and retains the charge. A generated charge transferring unit renders the photoelectric conversion unit and the generated charge retaining unit conductive therebetween after the exposure period has elapsed and transfers the charge from the photoelectric conversion unit to the generated charge retaining unit. An output charge retaining unit is formed to have substantially the same impurity concentration as that of the generated charge retaining unit and retains charge. A retained charge distributing unit renders the generated charge retaining unit and the output charge retaining unit conductive therebetween and uniformly distributes the charge retained in the generated charge retaining unit to the generated charge retaining unit and the output charge retaining unit. A signal generating unit generates a signal corresponding to the charge retained in the output charge retaining unit as an image signal after the distribution in the retained charge distributing unit.

    Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus
    10.
    发明授权
    Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus 有权

    公开(公告)号：US11362131B2

    公开(公告)日：2022-06-14

    申请号：US16944798

    申请日：2020-07-31

    Applicant: Sony Corporation

    Inventor： Yoshiharu Kudoh

    IPC: H01L27/146 ,  H04N5/376 ,  H04N5/378

    Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.

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