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公开(公告)号:US20160093534A1
公开(公告)日:2016-03-31
申请号:US14785554
申请日:2014-04-24
Applicant: SMARTRAC TECHNOLOGY GMBH
Inventor: Frank Kriebel , Laurence Singleton , Carsten Nieland
CPC classification number: H01L21/78 , B23K26/0006 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , B23K2103/56 , H01L29/34
Abstract: The invention relates to a method for producing chips (13) by dividing a wafer along dividing lines (11, 12) defining dimensions of the chip, wherein a focus (18) of a preferably pulsed laser radiation (16) is moved along the dividing lines on a first and at least a second path (25, 26) within the wafer body, wherein the laser radiation is applied to the wafer from a rear side (17) of the wafer, and the power density for producing the defects (28) on the first path (25) is lower than the power density for producing the defects (29) on the second path (26), and/or the number of defects on the first path is smaller than the number of defects on the second path.
Abstract translation: 本发明涉及一种通过沿着限定芯片尺寸的分割线(11,12)分割晶片来制造芯片(13)的方法,其中优选脉冲激光辐射(16)的焦点(18)沿着分割 在晶片体内的第一和至少第二路径(25,26)上的线,其中激光辐射从晶片的后侧(17)施加到晶片,并且用于产生缺陷的功率密度(28 )比第二路径(26)上产生缺陷(29)的功率密度低,和/或第一路径上的缺陷数小于第二路径(26)上的缺陷数量 路径。
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公开(公告)号:US10790160B2
公开(公告)日:2020-09-29
申请号:US15152544
申请日:2016-05-11
Applicant: SMARTRAC TECHNOLOGY GmbH
Inventor: Laurence Singleton , Ray Freeman
Abstract: This invention relates generally to ID frequency identification (RFID) transponders and receivers. More specifically to the methods, apparatus and systems of the fabrication of the transponders and receivers. In one example embodiment, to methods, apparatus, and systems to form effective barriers for devices having a layer structure, including encapsulating at least a portion of the side of the devices from being degraded due to impurity penetration into a laminate structure of the devices, which can cause corrosion or malfunction of the devices.
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公开(公告)号:US09978643B2
公开(公告)日:2018-05-22
申请号:US14785554
申请日:2014-04-24
Applicant: Smartrac Technology GmbH
Inventor: Frank Kriebel , Laurence Singleton , Carsten Nieland
IPC: H01L21/78 , B23K26/53 , B23K26/00 , B23K26/40 , H01L29/34 , B23K101/40 , B23K103/16 , B23K103/00
CPC classification number: H01L21/78 , B23K26/0006 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , B23K2103/56 , H01L29/34
Abstract: The invention relates to a method for producing chips (13) by dividing a wafer along dividing lines (11, 12) defining dimensions of the chip, wherein a focus (18) of a preferably pulsed laser radiation (16) is moved along the dividing lines on a first and at least a second path (25, 26) within the wafer body, wherein the laser radiation is applied to the wafer from a rear side (17) of the wafer, and the power density for producing the defects (28) on the first path (25) is lower than the power density for producing the defects (29) on the second path (26), and/or the number of defects on the first path is smaller than the number of defects on the second path.
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4.
公开(公告)号:US20160336198A1
公开(公告)日:2016-11-17
申请号:US15152544
申请日:2016-05-11
Applicant: SMARTRAC TECHNOLOGY GmbH
Inventor: Laurence Singleton , Ray Freeman
Abstract: This invention relates generally to ID frequency identification (RFID) transponders and receivers. More specifically to the methods, apparatus and systems of the fabrication of the transponders and receivers. In one example embodiment, to methods, apparatus, and systems to form effective barriers for devices having a layer structure, including encapsulating at least a portion of the side of the devices from being degraded due to impurity penetration into a laminate structure of the devices, which can cause corrosion or malfunction of the devices.
Abstract translation: 本发明一般涉及ID频率识别(RFID)应答器和接收机。 更具体地涉及应答器和接收器的制造方法,装置和系统。 在一个示例性实施例中,涉及为具有层结构的装置形成有效屏障的方法,装置和系统,包括封装装置侧面的至少一部分不会由于杂质渗透到装置的层压结构中而劣化, 这可能导致设备的腐蚀或故障。
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公开(公告)号:US20180261506A1
公开(公告)日:2018-09-13
申请号:US15974715
申请日:2018-05-09
Applicant: SMARTRAC TECHNOLOGY GmbH
Inventor: Frank Kriebel , Laurence Singleton , Carsten Nieland
CPC classification number: H01L21/78 , B23K26/0006 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , B23K2103/56 , H01L29/34
Abstract: The invention relates to a method for producing chips (13) by dividing a wafer along dividing lines (11, 12) defining dimensions of the chip, wherein a focus (18) of a preferably pulsed laser radiation (16) is moved along the dividing lines on a first and at least a second path (25, 26) within the wafer body, wherein the laser radiation is applied to the wafer from a rear side (17) of the wafer, and the power density for producing the defects (28) on the first path (25) is lower than the power density for producing the defects (29) on the second path (26), and/or the number of defects on the first path is smaller than the number of defects on the second path.
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