The invention relates to a method for producing chips (13) by dividing a wafer along dividing lines (11, 12) defining dimensions of the chip, wherein a focus (18) of a preferably pulsed laser radiation (16) is moved along the dividing lines on a first and at least a second path (25, 26) within the wafer body, wherein the laser radiation is applied to the wafer from a rear side (17) of the wafer, and the power density for producing the defects (28) on the first path (25) is lower than the power density for producing the defects (29) on the second path (26), and/or the number of defects on the first path is smaller than the number of defects on the second path.