MEMORY DEVICE AND TEST OPERATION THEREOF

    公开(公告)号:US20210279129A1

    公开(公告)日:2021-09-09

    申请号:US17137699

    申请日:2020-12-30

    Applicant: SK hynix Inc.

    Abstract: A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

    SEMICONDUCTOR CHIPS AND SEMICONDUCTOR PACKAGES SETTING BIT ORGANIZATION BASED ON OPERATION VOLTAGE

    公开(公告)号:US20240320172A1

    公开(公告)日:2024-09-26

    申请号:US18351910

    申请日:2023-07-13

    Applicant: SK hynix Inc.

    CPC classification number: G06F13/20

    Abstract: A semiconductor chip includes a first input/output control circuit configured to generate a first input/output switching signal that controls a first data input/output operation on a first data input/output group according to a first input voltage generated based on an operation voltage, and a second input/output control circuit configured to generate a second input/output switching signal that controls a second data input/output operation on a second data input/output group according to a second input voltage generated based on the operation voltage.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM

    公开(公告)号:US20240071443A1

    公开(公告)日:2024-02-29

    申请号:US18089322

    申请日:2022-12-27

    Applicant: SK hynix Inc.

    Inventor: Joon Hong PARK

    CPC classification number: G11C7/222 G11C7/1066 G11C7/1093

    Abstract: A semiconductor device includes a control circuit configured to generate a buffer enable signal that is enabled when patterns of a strobe signal and an inverted strobe signal are preset patterns after the start of a write operation and configured to generate an internal strobe signal by dividing frequencies of an input strobe signal and an inverted input strobe signal, and a buffer circuit configured to generate the input strobe signal and the inverted input strobe signal from the strobe signal and the inverted strobe signal that are received when the buffer enable signal is enabled and configured to generate transfer data by receiving data for performing the write operation when the buffer enable signal is enabled.

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