公开(公告)号：US11724356B2

公开(公告)日：2023-08-15

申请号：US16108607

申请日：2018-08-22

Applicant: SK enpulse Co., Ltd.

Inventor： Jang Won Seo ,  Hyuk Hee Han ,  Hye Young Heo ,  Joonsung Ryou ,  Young Pil Kwon

IPC: B24B37/24 ,  C08L75/04 ,  H01L21/67 ,  C08G18/76 ,  C08G18/18 ,  C08G18/62 ,  C08G18/20 ,  C08J9/12 ,  C08J9/00 ,  C08G18/75 ,  C08G18/48 ,  B24D11/04 ,  C08G18/24 ,  C08G18/42 ,  C08G18/73 ,  C08J9/32 ,  C08G18/44

CPC classification number: B24B37/24 ,  B24D11/04 ,  C08G18/1816 ,  C08G18/1825 ,  C08G18/1833 ,  C08G18/2018 ,  C08G18/2081 ,  C08G18/244 ,  C08G18/246 ,  C08G18/42 ,  C08G18/44 ,  C08G18/48 ,  C08G18/6216 ,  C08G18/73 ,  C08G18/755 ,  C08G18/757 ,  C08G18/7614 ,  C08G18/7621 ,  C08G18/7671 ,  C08G18/7678 ,  C08G18/7685 ,  C08J9/0028 ,  C08J9/0042 ,  C08J9/0052 ,  C08J9/122 ,  C08J9/32 ,  C08L75/04 ,  H01L21/67092 ,  C08G2110/005 ,  C08G2110/0025 ,  C08J2201/026 ,  C08J2203/06 ,  C08J2203/22 ,  C08J2205/044 ,  C08J2375/04 ,  C08G18/10 ,  C08G18/3814

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.

公开(公告)号：US11772236B2

公开(公告)日：2023-10-03

申请号：US16385653

申请日：2019-04-16

Applicant: SK enpulse Co., Ltd.

Inventor： Hye Young Heo ,  Jang Won Seo ,  Jong Wook Yun ,  Sunghoon Yun ,  Jaein Ahn

IPC: B24D3/34 ,  B24B37/24 ,  B24B37/22 ,  B24D3/28 ,  B24D11/00 ,  C08J9/32 ,  H01L21/304

CPC classification number: B24D3/348 ,  B24B37/22 ,  B24B37/24 ,  B24D3/28 ,  B24D11/005 ,  C08J9/32 ,  C08J2203/22 ,  C08J2205/044 ,  C08J2205/048 ,  C08J2207/00 ,  C08J2375/04 ,  H01L21/304 ,  H01L2924/069

Abstract: Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

公开(公告)号：US11766759B2

公开(公告)日：2023-09-26

申请号：US16389711

申请日：2019-04-19

Applicant: SK enpulse Co., Ltd.

Inventor： Hye Young Heo ,  Jang Won Seo ,  Jong Wook Yun ,  Sunghoon Yun ,  Jaein Ahn

IPC: B24B37/24 ,  B24B37/26 ,  B24D18/00 ,  B29C39/00 ,  B29C39/02 ,  C08G18/08 ,  C08G18/10 ,  C08G18/32 ,  C08G18/76 ,  C08J5/18 ,  C08J9/00 ,  C08J9/04 ,  C08J9/12 ,  C08J9/236 ,  C08J9/32 ,  C08L75/04 ,  C09D175/04 ,  H01L21/321

CPC classification number: B24B37/24 ,  C08J9/32 ,  C08G18/10 ,  C08G18/14 ,  C08J2375/04 ,  H01L21/3212

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.

公开(公告)号：US11642752B2

公开(公告)日：2023-05-09

申请号：US16311614

申请日：2018-09-10

Applicant: SK enpulse Co., Ltd.

Inventor： Jang Won Seo ,  Hyuk Hee Han ,  Hye Young Heo ,  Joonsung Ryou ,  Young Pil Kwon

IPC: B24B37/24 ,  C08J9/12 ,  C08J9/32

CPC classification number: B24B37/24 ,  C08J9/122 ,  C08J9/32 ,  C08J2203/22 ,  C08J2205/044 ,  C08J2375/04

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.

公开(公告)号：US11951591B2

公开(公告)日：2024-04-09

申请号：US17520206

申请日：2021-11-05

Applicant: SK enpulse Co., Ltd.

Inventor： Hye Young Heo ,  Jang Won Seo ,  Jae In Ahn ,  Jong Wook Yun

IPC: B24B37/26 ,  B24B37/015 ,  B24B37/20 ,  B24B37/22

CPC classification number: B24B37/26 ,  B24B37/015 ,  B24B37/205 ,  B24B37/22

Abstract: The present disclosure provides a polishing pad, which may maintain polishing performances required for a polishing process, such as a removal rate and a polishing profile, minimize defects that may occur on a wafer during the polishing process, and polish layers of different materials so as to have the same level of flatness even when the layers are polished at the same time, and a method for producing the polishing pad. In addition, according to the present disclosure, it is possible to determine a polishing pad, which shows an optimal removal rate selectivity along with excellent performance in a CMP process, through the physical property values of the polishing pad without a direct polishing test.

公开(公告)号：US12162114B2

公开(公告)日：2024-12-10

申请号：US17488859

申请日：2021-09-29

Applicant: SK enpulse Co., Ltd.

Inventor： Jong Wook Yun ,  Jae In Ahn ,  Eun Sun Joeng ,  Hye Young Heo ,  Jang Won Seo

IPC: B24B29/00 ,  C08J9/32 ,  H01L21/306

Abstract: The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

公开(公告)号：US11931856B2

公开(公告)日：2024-03-19

申请号：US17592706

申请日：2022-02-04

Applicant: SK enpulse Co., Ltd.

Inventor： Sunghoon Yun ,  Hye Young Heo ,  Jang Won Seo

IPC: B24D11/00 ,  B24B37/24 ,  B24B37/26 ,  H01L21/321

CPC classification number: B24B37/24 ,  B24B37/26 ,  B24D11/00 ,  B24D11/003 ,  H01L21/3212

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.