Method of making an ion implanted resistor
    1.
    发明授权
    Method of making an ion implanted resistor 失效
    制造离子注入电阻的方法

    公开(公告)号:US3902926A

    公开(公告)日:1975-09-02

    申请号:US44497974

    申请日:1974-02-22

    申请人: SIGNETICS CORP

    摘要: Ion implanted resistor formed in a body of crystalline semiconductor material of a first conductivity type and a known bulk resistivity with at least one region of implanted ions in the body having a conductivity opposite that of the body. The resistance changes no more than 3% from the room temperature value between - 50* and 125* C. Between 0* and 70* C., the change is only 0.3%. In the method, ion implanted resistors having the desired sheet resistivity are formed by varying the implantation energy and/or the thickness of a stopping layer. In addition, the resistor is annealed at a temperature ranging from 550* C. to 650* C.

    摘要翻译: 离子注入电阻器形成在具有第一导电类型的结晶半导体材料的主体中,并且已知的体电阻率与体内具有相对于体的导电性的导电离子的至少一个区域。 电阻值从-50℃到125℃的室温值变化不超过3%。在0℃和70℃之间,变化仅为0.3%。