专利检索 ap:("SHOWA DENKO K.K.") AND inv:"Taizo Ito" 第 1 页

1.

发明申请
Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor 有权

公开(公告)号：US20040192048A1

公开(公告)日：2004-09-30

申请号：US10821944

申请日：2004-04-12

申请人： SHOWA DENKO K.K.

发明人： Hideki Hayashida , Taizo Ito , Yasuyuki Sakaguchi

IPC分类号： C30B001/00 , H01L021/20 , H01L021/36 , H01L021/302 , H01L021/461

CPC分类号： C01C1/003 , C01C1/024 , C01P2002/82 , C01P2006/82 , C23C16/303 , C23C16/4402 , C23C16/4481 , C30B25/02 , C30B29/403 , C30B29/406 , Y10S438/905

摘要： Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.