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公开(公告)号：US10109485B2
公开(公告)日：2018-10-23
申请号：US15340264
申请日：2016-11-01
IPC分类号： G03F7/004 , H01L21/027 , G03F7/038 , G03F7/26 , G03F7/40 , G03F7/38 , H01L21/308 , H01L21/311 , C08G77/52 , C09D183/14 , G03F7/039 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/033 , H01L21/3213 , G03F7/075 , G03F7/09 , C08G77/00
摘要： The present invention provides a silicon-containing condensate comprising one or more repeating units selected from a repeating unit shown by the following general formula (A1), a repeating unit shown by the following general formula (A2), and a repeating unit shown by the following general formula (A3), wherein R1 represents a group shown by the following general formula (A-1) or (A-2); R2 and R3 each independently represent the same group as R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms other than R1. There can be provided a silicon-containing condensate to give a composition for forming a silicon-containing resist under layer film which can form a resist under layer film with good adhesiveness to any resist pattern, whether the pattern is formed by negative development or positive development.
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公开(公告)号：US10934463B2
公开(公告)日：2021-03-02
申请号：US16369481
申请日：2019-03-29
发明人： Jun Hatakeyama , Motoaki Iwabuchi , Keisuke Niida , Koji Hasegawa
IPC分类号： C09J175/04 , C09J183/10 , C09J7/30 , C09J7/10 , C09J5/06 , C09J175/16 , C08G77/458 , C08G18/83 , C08G77/00
摘要： The present invention provides an adhesive film including a resin having a silsesquioxane in a side chain and a urethane bond in a main chain, together with a method for forming the same. The inventive adhesive film has excellent stretchability and strength, with the film surface having higher adhesion and thinner film thickness.
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公开(公告)号：US11692066B2
公开(公告)日：2023-07-04
申请号：US16850099
申请日：2020-04-16
发明人： Daisuke Kori , Keisuke Niida , Takashi Sawamura , Takeru Watanabe , Seiichiro Tachibana , Tsutomu Ogihara
CPC分类号： C08G73/10 , G03F7/0045 , G03F7/162 , G03F7/168 , G03F7/094
摘要： An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent,
noting that in the general formula (1A), when W1 represents any of
R1 does not represent any of-
公开(公告)号：US11676814B2
公开(公告)日：2023-06-13
申请号：US16884203
申请日：2020-05-27
发明人： Daisuke Kori , Takashi Sawamura , Keisuke Niida , Seiichiro Tachibana , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： H01L21/027 , H01L21/033 , G03F7/09
CPC分类号： H01L21/0271 , G03F7/091 , G03F7/094 , H01L21/033
摘要： A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent:
wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group:
wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.-
公开(公告)号：US11635691B2
公开(公告)日：2023-04-25
申请号：US16921023
申请日：2020-07-06
发明人： Daisuke Kori , Takashi Sawamura , Keisuke Niida , Seiichiro Tachibana , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： G03F7/09 , C08G61/12 , C08G61/10 , C08J5/18 , G03F7/16 , G03F7/075 , G03F7/11 , G03F7/20 , G03F7/32 , H01L21/311 , H01L21/027
摘要： A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.
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公开(公告)号：US11307497B2
公开(公告)日：2022-04-19
申请号：US16293150
申请日：2019-03-05
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara
IPC分类号： G03F7/025 , G03F7/11 , G03F7/09 , C07D335/12 , H01L21/027 , H01L21/311 , C08F38/00 , C07C15/56 , C07C41/01 , C07C215/46
摘要： A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.
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公开(公告)号：US11022882B2
公开(公告)日：2021-06-01
申请号：US16013728
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
IPC分类号： G03F7/025 , C07C13/54 , C07C43/23 , G03F7/039 , C08K5/00 , C08L49/00 , H01L21/027 , H01L21/308
摘要： A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
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8.发明授权公开(公告)号：US10604618B2
公开(公告)日：2020-03-31
申请号：US16013672
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
摘要： A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
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公开(公告)号：US12105420B2
公开(公告)日：2024-10-01
申请号：US17183989
申请日：2021-02-24
IPC分类号： G03F7/09 , C08G61/10 , C08L65/00 , C09D165/00 , G03F7/00 , G03F7/11 , H01L21/027
CPC分类号： G03F7/094 , C08G61/10 , C08L65/00 , C09D165/00 , G03F7/11 , H01L21/0276 , C08G2261/11 , C08G2261/124 , C08G2261/1414 , C08G2261/1422 , C08G2261/1424 , C08G2261/148 , C08G2261/149 , C08G2261/18 , C08G2261/228 , C08G2261/3142 , G03F7/0002
摘要： The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and W1 represents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.
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公开(公告)号：US11886118B2
公开(公告)日：2024-01-30
申请号：US17181776
申请日：2021-02-22
IPC分类号： G03F7/11 , C09D7/20 , C08F138/00 , C09D4/00 , C09D149/00 , G03F7/09 , H01L21/027 , H01L21/768
CPC分类号： G03F7/11 , C08F138/00 , C09D4/00 , C09D7/20 , C09D149/00 , G03F7/094 , H01L21/0273 , H01L21/768
摘要： A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where W1 represents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and R1 an alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.
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