公开(公告)号：US20250065360A1

公开(公告)日：2025-02-27

申请号：US18768956

申请日：2024-07-10

Applicant: SEMES CO., LTD. ,  Samsung Electronics Co., Ltd.

Inventor： Jin Yeong Sung ,  Ki Hoon Choi ,  Seung Un Oh ,  Young Ho Park ,  Sang Hyeon Ryu ,  Jang Jin Lee ,  Hyun Yoon ,  Sang Gun Lee ,  Yu Jin Cho ,  Ho Jong Hwang ,  Jong Ju Park ,  Jong Keun Oh ,  Yong Woo Kim

IPC: B05C13/00 ,  G05B19/401 ,  G05B19/404 ,  G06T7/73

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

公开(公告)号：US11923216B2

公开(公告)日：2024-03-05

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Shin ,  Sang Jin Park ,  Hae Won Choi ,  Jang Jin Lee ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Jin Yeong Sung ,  Pil Kyun Heo

IPC: H01L21/67 ,  G03F7/16 ,  H01L21/677

CPC classification number: H01L21/67196 ,  G03F7/168 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67748

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

公开(公告)号：US11940734B2

公开(公告)日：2024-03-26

申请号：US17726343

申请日：2022-04-21

Applicant: SEMES CO., LTD.

Inventor： Ki Hoon Choi ,  Eung Su Kim ,  Pil Kyun Heo ,  Jin Yeong Sung ,  Hae-Won Choi ,  Anton Koriakin ,  Joon Ho Won

IPC: G03F7/30 ,  F26B5/00

CPC classification number: G03F7/30 ,  F26B5/005

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

公开(公告)号：US20230341779A1

公开(公告)日：2023-10-26

申请号：US17726343

申请日：2022-04-21

Applicant: SEMES CO., LTD.

Inventor： Ki Hoon Choi ,  Eung Su Kim ,  Pil Kyun Heo ,  Jin Yeong Sung ,  Hae-Won Choi ,  Anton Koriakin ,  Joon Ho Won

IPC: G03F7/30 ,  F26B5/00

CPC classification number: G03F7/30 ,  F26B5/005

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.