公开(公告)号：US20170092640A1

公开(公告)日：2017-03-30

申请号：US14865526

申请日：2015-09-25

Applicant: SANKEN ELECTRIC CO., LTD.

Inventor： Hironori Aoki ,  Shuichi KANEKO

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20

CPC classification number: H01L28/20 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/2003 ,  H03F1/223 ,  H03F1/226 ,  H03F1/301 ,  H03F1/306 ,  H03F3/3069 ,  H03F3/4508 ,  H03F3/45596 ,  H03F2203/30078 ,  H03F2203/30111

Abstract: Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

公开(公告)号：US20170104064A1

公开(公告)日：2017-04-13

申请号：US14880056

申请日：2015-10-09

Applicant: SANKEN ELECTRIC CO., LTD.

Inventor： Hironori Aoki ,  Shuichi KANEKO

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316

Abstract: Nitride semiconductor devices having interdigitated array source and drain electrodes arranged like crossed fingers are described. The electric fields extended at the tips of the array electrodes are relaxed. Desirably, the rounded source electrode tip ends have a larger effective diameter than the rounded tip ends of the drain electrodes. Devices constructed accordingly have higher withstand voltages.