公开(公告)号：US20190189778A1

公开(公告)日：2019-06-20

申请号：US16284843

申请日：2019-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungil PARK ,  Changhee KIM ,  Yunil LEE ,  Mirco CANTORO ,  Junggun YOU ,  Donghun LEE

IPC: H01L29/66 ,  H01L29/40 ,  H01L21/28 ,  H01L29/10 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.