公开(公告)号：US20200027877A1

公开(公告)日：2020-01-23

申请号：US16437169

申请日：2019-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINYOUNG KIM ,  YURI MASUOKA

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/36 ,  H01L29/78 ,  H01L21/8234

Abstract: A semiconductor device includes: a substrate including a first well region; a gate electrode disposed on the substrate; a semiconductor pattern disposed between the substrate and the gate electrode; a plurality of source/drain patterns disposed on the substrate and on opposing sides of the gate electrode; an impurity layer disposed in the substrate and between the semiconductor pattern and the first well region; and a barrier layer disposed in the substrate and between the semiconductor pattern and the impurity layer. The barrier layer includes oxygen.

公开(公告)号：US20210327877A1

公开(公告)日：2021-10-21

申请号：US17146938

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHANWOOK LEE ,  SEUNGKWON KIM ,  JAECHUL KIM ,  YOUNGGUN KO ,  YURI MASUOKA

IPC: H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/66

Abstract: Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction .