专利检索 ap:("SAMSUNG ELECTRONICS CO., LTD.") AND inv:"Wootae Kim" 第 1 页

1.

发明授权
Semiconductor device and method of fabricating the same 有权

公开(公告)号：US11430779B2

公开(公告)日：2022-08-30

申请号：US17028855

申请日：2020-09-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaewan Yang , Wootae Kim , Hyungock Kim , Sangdo Park , Jun Seomun

IPC分类号： H01L27/02 , H01L21/768 , H01L27/088 , H01L23/522

摘要： Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.

2.

发明授权
Method and system for manufacturing an integrated circuit in consideration of a local layout effect 有权

公开(公告)号：US10599130B2

公开(公告)日：2020-03-24

申请号：US15867939

申请日：2018-01-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Wootae Kim , Hyung-Ock Kim , Jaehoon Kim , Naya Ha , Ki-Ok Kim , Eunbyeol Kim , Jung Yun Choi , Sun Ik Heo

IPC分类号： G06F17/50 , G05B19/4097

摘要： A method of manufacturing an integrated circuit (IC) including instances of standard cells includes arranging a first instance and arranging a second instance adjacent to the first instance. The second instance has a front-end layer pattern corresponding to a context group of the first instance. The context group includes information about front-end layer patterns of instances, the front-end layer patterns causing a same local layout effect (LLE) on the first instance and arranged adjacent to the first instance.