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    Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method
    3.
    发明授权
    Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method 有权
    使用等离子体掺杂工艺制造半导体器件的方法和通过该方法制造的半导体器件

    公开(公告)号：US09577075B2

    公开(公告)日：2017-02-21

    申请号：US14460404

    申请日：2014-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungin Choi ,  Sunghyun Choi ,  Yong-Suk Tak ,  Bonyoung Koo ,  Jaejong Han

    IPC: H01L29/66 ,  H01L29/06 ,  H01L21/223 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/84

    CPC classification number: H01L29/66803 ,  H01L21/2236 ,  H01L21/762 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

    Abstract: A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device isolation pattern covering a lower portion of the preliminary fin-type active pattern, forming a gate structure extending in a second direction and crossing over the preliminary fin-type active pattern, forming a fin-type active pattern having a first region and a second region, forming a preliminary impurity-doped pattern on the second region by using a selective epitaxial-growth process, and forming an impurity-doped pattern by injecting impurities using a plasma doping process, wherein the upper surface of the first region is at a first level and the upper surface of the second region is at a second level lower than the first level.

    Abstract translation: 一种制造半导体器件的方法包括形成在第一方向上延伸的预备鳍型有源图案，形成覆盖预备鳍型有源图案的下部的器件隔离图案，形成沿第二方向延伸的栅极结构，以及 跨越预备鳍型有源图案，形成具有第一区域和第二区域的鳍式有源图案，通过选择性外延生长工艺在第二区域上形成预备杂质掺杂图案，并形成杂质 通过使用等离子体掺杂工艺注入杂质的掺杂图案，其中第一区域的上表面处于第一水平，并且第二区域的上表面处于低于第一水平的第二水平。

    Communication method and apparatus using multiple channels in unlicensed band
    8.
    发明授权
    Communication method and apparatus using multiple channels in unlicensed band 有权

    公开(公告)号：US11051337B2

    公开(公告)日：2021-06-29

    申请号：US16565305

    申请日：2019-09-09

    Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R&DB Foundation

    Inventor： Byounghoon Jung ,  Jihoon Kim ,  Sunghyun Choi ,  Kangjin Yoon ,  Jaehong Yi

    IPC: H04W74/08 ,  H04W16/14

    Abstract: A communication method using a plurality of channels in a wireless communication system supporting an unlicensed band. The communication method includes: performing listen-before-talk (LBT) for transmitting a random access preamble on each of a plurality of control channels supported by a user equipment (UE), from among a plurality of control channels supported by a base station; transmitting a random access preamble through a control channel where the LBT succeeded from among the plurality of control channels where the LBT for transmitting the random access preamble is performed; and receiving a random access response (RAR) through a control channel determined according to a result of the LBT performed by the base station, from among the plurality of control channels supported by the UE, wherein a control channel is a channel through which a control signal and a data signal are transmitted and received.

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