公开(公告)号：US20180204762A1

公开(公告)日：2018-07-19

申请号：US15828728

申请日：2017-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunki MIN ,  Songe KIM ,  Koungmin RYU ,  Je-Min YOO

IPC: H01L21/762 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238

CPC classification number: H01L21/76229 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823878 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.