公开(公告)号：US11955408B2

公开(公告)日：2024-04-09

申请号：US17036145

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sohye Cho ,  Pilkyu Kang ,  Kwangjin Moon ,  Taeseong Kim

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/50 ,  H01L23/528 ,  H10B10/00

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/5286 ,  H10B10/12 ,  H01L23/50

Abstract: An integrated circuit semiconductor device includes a substrate including a first surface and a second surface opposite the first surface, a trench in the substrate, the trench extending from the first surface of the substrate toward the second surface of the substrate, a through silicon via (TSV) landing part in the trench, the TSV landing part having a first portion spaced apart from the first surface of the substrate, and a second portion between the first portion and the first surface of the substrate, the first portion being wider than the second portion, a TSV hole in the substrate, the TSV hole extending from the second surface of the substrate and aligned with a bottom surface of the TSV landing part, and a TSV in the TSV hole and in contact with the bottom surface of the TSV landing part.

公开(公告)号：US12166000B2

公开(公告)日：2024-12-10

申请号：US17541719

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoonjoo Na ,  Jungseob So ,  Taeseong Kim ,  Sohye Cho ,  Sonkwan Hwang

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/18

Abstract: The semiconductor device includes a lower chip structure including a peripheral circuit, a first memory chip structure on the lower chip structure, and a second memory chip structure on the first memory chip structure. The first memory chip structure includes a first stack structure and a first vertical memory structure. The first stack structure includes first gate lines stacked in a vertical direction and extending in a first horizontal direction. The first vertical memory structure penetrates through the first gate lines in the vertical direction. The second memory chip structure includes a second stack structure and a second vertical memory structure. The second stack structure includes second gate lines stacked in the vertical direction and extending in a second horizontal direction, perpendicular to the first horizontal direction. The second vertical memory structure penetrates through the second gate lines in the vertical direction.