公开(公告)号：US20240203509A1

公开(公告)日：2024-06-20

申请号：US18242232

申请日：2023-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungbum KIM ,  Yonghyuk CHOI ,  Hyun SEO ,  Seungyong CHOI

IPC: G11C16/26 ,  G11C16/10

CPC classification number: G11C16/26 ,  G11C16/10 ,  G11C16/0483

Abstract: A memory device comprises: a memory cell array including a plurality of cell blocks including a first cell block storing information other than user data and a second cell block storing the user data, wherein each of the plurality of cell blocks includes a plurality of cell strings and control circuitry configured to control a write operation and a read operation of the memory cell array. A first ground select line (GSL) region included in the first cell block includes a plurality of GSLs stacked in a vertical direction. One or more ground select transistors of a plurality of ground select transistors connected to each of the GSLs are programmed to a first threshold voltage and the other ground select transistors of the plurality of ground select transistors not connected to the GSLs are programmed to a second threshold voltage that is higher than the first threshold voltage. A first line included in the first GSL region in the first cell block is arranged at a same height as a word line connected to memory cells storing the user data in the second cell block.

公开(公告)号：US20220333847A1

公开(公告)日：2022-10-20

申请号：US17684837

申请日：2022-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joosang YOO ,  Seungyong CHOI ,  Jonghoon OH

IPC: F25D23/02 ,  F25D23/00 ,  F25D23/04

Abstract: A refrigerator including: a main body having a storage room; a door opening and closing the storage room; an electric box to accommodate a printed circuit board; and a guide case to accommodate the electric box, provided on a top surface of the main body, and including a guide rail formed to extend along a front-rear direction of the guide case to guide a movement of the electric box along the front-rear direction of the guide case.

公开(公告)号：US20220415408A1

公开(公告)日：2022-12-29

申请号：US17648311

申请日：2022-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyong PARK ,  Sangwon Park ,  Dongjin SHIN ,  Suchang Jeon ,  Seungyong CHOI

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/14 ,  G11C16/20

Abstract: A non-volatile memory device includes a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other; a user area configured to store user data; an initialization register configured to store the first initial data or update the second initial data in whole or in part; and control logic configured to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register.