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Patent Agency Ranking
公开(公告)号：US11487663B2
公开(公告)日：2022-11-01
申请号：US16444998
申请日：2019-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong-Myung Lee , Seung-Uk Shin , Jin-Young Choi
IPC: G06F11/20 , G06F12/0804 , G06F12/10
Abstract: In a method of operating a storage device including a plurality of disks, the plurality of disks is divided into a plurality of journal areas and a plurality of data areas, respectively. When a write command for target disks among the plurality of disks is received, a first write operation is performed to store target data to be written into journal areas of the target disks. The target disks are included in a same array. After the first write operation is completed, a second write operation is performed to store the target data into data areas of the target disks.
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2.发明授权公开(公告)号：US12124368B2
公开(公告)日：2024-10-22
申请号：US17740927
申请日：2022-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byoung-Geun Kim , In-Hwan Doh , Joo-Young Hwang , Seung-Uk Shin , Min-Seok Ko , Jae-Yoon Choi
CPC classification number: G06F12/0253 , G06F9/3816 , G06F12/10 , G06F2212/1044 , G06F2212/657
Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
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公开(公告)号：US09715344B2
公开(公告)日：2017-07-25
申请号：US14620305
申请日：2015-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Kwon Moon , Seung-Uk Shin , Kyung-Ho Kim
CPC classification number: G06F3/0616 , G06F3/0659 , G06F3/0688 , G06F12/0246 , G06F2212/7205
Abstract: A flash memory system is provided. The flash memory system includes a memory device including a memory cell array including at least one data block and a controller that determines whether to end background garbage collection according to a lifespan index of the at least one data block. The lifespan index may be decreased by the background garbage collection. The controller may end the background garbage collection when the decreased lifespan index is equal to or higher than a reference value.
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4.发明授权公开(公告)号：US11341043B2
公开(公告)日：2022-05-24
申请号：US16543093
申请日：2019-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byoung-Geun Kim , In-Hwan Doh , Joo-Young Hwang , Seung-Uk Shin , Min-Seok Ko , Jae-Yoon Choi
Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
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公开(公告)号：US20200159656A1
公开(公告)日：2020-05-21
申请号：US16543093
申请日：2019-08-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byoung-Geun Kim , In-Hwan Doh , Joo-Young Hwang , Seung-Uk Shin , Min-Seok Ko , Jae-Yoon Choi
Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
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