公开(公告)号：US20250071991A1

公开(公告)日：2025-02-27

申请号：US18583121

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoo HAN ,  Jongho WOO ,  Seung Min LEE ,  Moonkang CHOI

IPC: H10B43/27 ,  H01L25/065 ,  H10B43/10 ,  H10B43/35 ,  H10B51/10 ,  H10B51/20 ,  H10B80/00

Abstract: A semiconductor device includes a source structure comprising a first source layer, a second source layer on the first source layer, and a third source layer on the second source layer, a gate stack structure on the source structure, the gate stack structure with alternating insulating patterns and conductive patterns, and a memory channel structure penetrating the gate stack structure. The memory channel structure includes a channel layer and a memory layer surrounding the channel layer. The channel layer penetrates the memory layer and the second source layer, and a bottom surface of the channel layer is in contact with the source structure.

公开(公告)号：US20250063731A1

公开(公告)日：2025-02-20

申请号：US18650189

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangwoo HAN ,  Jongho WOO ,  Seung Min LEE ,  Moonkang CHOI

IPC: H10B43/27 ,  H01L25/065 ,  H10B43/10 ,  H10B43/35 ,  H10B51/10 ,  H10B51/20 ,  H10B80/00

Abstract: A semiconductor device includes a source structure having a first source layer, a second source layer on the first source layer, and a third source layer on the second source layer. A gate stack structure is on the source structure. The gate stack structure includes dielectric patterns and conductive patterns that are alternately stacked. A memory channel structure penetrates the gate stack structure. The memory channel structure includes a channel layer. A data storage layer surrounds the channel layer. A blocking layer surrounds the data storage layer. The second source layer includes an inner sidewall directly contacting the channel layer. The third source layer includes an inner sidewall directly contacting the data storage layer.

公开(公告)号：US20190196683A1

公开(公告)日：2019-06-27

申请号：US16098982

申请日：2017-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Youn WON ,  Na Young KOH ,  Hyun Jee KWAK ,  Ji Hyae KIM ,  Seung Min LEE ,  Won Hee LEE ,  Woo Seok HWANG

IPC: G06F3/0486 ,  G06F3/16 ,  G06F3/0482

CPC classification number: G06F3/0486 ,  G06F3/0482 ,  G06F3/167

Abstract: An electronic device may include a display, and a processor. The processor may display an execution screen of a first application in the display, may change the execution screen of the first application to an execution screen of a second application, and may display a first object provided by the first application on the execution screen of the second application.

公开(公告)号：US20250048642A1

公开(公告)日：2025-02-06

申请号：US18587355

申请日：2024-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il Ho MYEONG ,  Su Seong NOH ,  Seung Min LEE ,  Sang Woo HAN

IPC: H10B51/20 ,  H10B51/30

Abstract: A semiconductor memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating films alternately stacked on the substrate, a channel structure extending in a first direction and penetrating the mold structure, the channel structure including a semiconductor pattern and a ferroelectric film between the semiconductor pattern and the plurality of gate electrodes, a channel pad on the channel structure, and a bit line contact connected to the channel pad, wherein an uppermost part of the ferroelectric film protrudes beyond an uppermost gate electrode among the plurality of gate electrodes, the channel pad includes a first portion in contact with the semiconductor pattern and a second portion in contact with the first portion and the bit line contact, the first portion has a first width, and the second portion has a second width greater than the first width.

公开(公告)号：US20220099358A1

公开(公告)日：2022-03-31

申请号：US17427350

申请日：2020-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yun JUNG ,  Dae Youn KIM ,  Jung Keun PARK ,  Seung Min LEE ,  Jeong Man NAM ,  Young Gon PARK ,  Jung Yong LEE

IPC: F25D23/06 ,  F25D23/02 ,  F25D23/08

Abstract: A refrigerator includes a main body including a plurality of wall modules, a storeroom disposed inside the main body, and a door arranged to open or close the storeroom. The plurality of wall modules include a first wall module having a concave portion and a second wall module having a convex portion engaged with the concave portion. The convex portion includes an insulation filling space in which insulation is filled, and a fastening groove. A fastening member is inserted into the fastening groove so as to be fastened to the first wall module and the second wall module.