公开(公告)号：US20240130126A1

公开(公告)日：2024-04-18

申请号：US18349460

申请日：2023-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Dong MUN ,  Seong Hun PARK ,  Hauk HAN ,  Seong Jin KIM

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: A non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.

公开(公告)号：US20130120623A1

公开(公告)日：2013-05-16

申请号：US13729880

申请日：2012-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Jin KIM

IPC: H04N5/335

CPC classification number: H04N5/335 ,  G01S17/89 ,  H04N5/35545 ,  H04N5/37457 ,  H04N9/045

Abstract: Disclosed is an imaging sensor. The image sensor may comprise a plurality of pixels. At least one of the plurality of pixels may comprise a plurality of photo-diodes, wherein the plurality of photo-diodes share a portion of a detecting. The detecting circuit may comprise at least one of a reset transistor, a source follower, a selective transistor and a Floating Diffusion (FD) node.

Abstract translation: 公开了一种成像传感器。 图像传感器可以包括多个像素。 多个像素中的至少一个可以包括多个光电二极管，其中多个光电二极管共享检测的一部分。 检测电路可以包括复位晶体管，源极跟随器，选择晶体管和浮动扩散（FD）节点中的至少一个。

公开(公告)号：US20140104397A1

公开(公告)日：2014-04-17

申请号：US13927414

申请日：2013-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Soon SHIN ,  Seong Jin KIM

IPC: H04N13/02

CPC classification number: H04N5/347 ,  H04N5/332 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/045 ,  H04N13/257

Abstract: An image sensor having a pixel architecture for capturing a depth image and a color image. The image sensor may be configured in a pixel architecture in which a floating diffusion (FD) node is shared, and may operate in different pixel architectures in a depth mode and a color mode, respectively.

Abstract translation: 一种具有用于捕获深度图像和彩色图像的像素结构的图像传感器。 图像传感器可以被配置在其中共享浮动扩散（FD）节点的像素架构中，并且可以分别以深度模式和颜色模式在不同的像素架构中操作。