公开(公告)号：US20220115506A1

公开(公告)日：2022-04-14

申请号：US17335413

申请日：2021-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hoon LEE ,  Chang Woo SOHN ,  Keun Hwi CHO ,  Sang Won BAEK

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes first and second isolation regions, a first active region extending in a first direction between the first and second isolation regions, a first fin pattern on the first active region, nanowires on the first fin pattern, a gate electrode in a second direction on the first fin pattern, the gate electrode surrounding the nanowires, a first source/drain region on a side of the gate electrode, the first source/drain region being on the first active region and in contact with the nanowires, and a first source/drain contact on the first source/drain region, the first source/drain contact including a first portion on a top surface of the first source/drain region, and a second portion extending toward the first active region along a sidewall of the first source/drain region, an end of the first source/drain contact being on one of the first and second isolation regions.