公开(公告)号：US20150001463A1

公开(公告)日：2015-01-01

申请号：US14336973

申请日：2014-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

IPC: H01L33/38 ,  H01L33/50 ,  H01L33/44 ,  H01L33/56 ,  H01L33/00 ,  H01L33/40

CPC classification number: H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

Abstract translation: 在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第二导电型电极包括导电孔和电连接部。 导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。 电连接部分从导电通孔延伸并暴露于发光结构的外部。 绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。 形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。 在从有源层发射的光的路径上形成不均匀结构。