公开(公告)号：US20150001463A1

公开(公告)日：2015-01-01

申请号：US14336973

申请日：2014-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

IPC: H01L33/38 ,  H01L33/50 ,  H01L33/44 ,  H01L33/56 ,  H01L33/00 ,  H01L33/40

CPC classification number: H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

Abstract translation: 在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第二导电型电极包括导电孔和电连接部。 导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。 电连接部分从导电通孔延伸并暴露于发光结构的外部。 绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。 形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。 在从有源层发射的光的路径上形成不均匀结构。

公开(公告)号：US20140097458A1

公开(公告)日：2014-04-10

申请号：US14101242

申请日：2013-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae . CHOI ,  Jin Hyun LEE ,  Ki Yeol PARK ,  Myong Soo CHO

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。