公开(公告)号：US20170094204A1

公开(公告)日：2017-03-30

申请号：US15372739

申请日：2016-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-MYUNG LEE ,  GUN-HEE HAN ,  SEOG-HEON HAM

IPC: H04N5/357 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/369

CPC classification number: H04N5/3575 ,  H04N3/155 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/378

Abstract: A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.

公开(公告)号：US20160065867A1

公开(公告)日：2016-03-03

申请号：US14934718

申请日：2015-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-MYUNG LEE ,  GUN-HEE LEE ,  SEOG-HEON HAM

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/378 ,  H04N3/14

CPC classification number: H04N5/3575 ,  H04N3/155 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/378

Abstract: A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.

Abstract translation: 公开了一种数字双采样方法，相关的互补金属氧化物半导体（CMOS）图像传感器和包括CMOS图像传感器的数字照相机。 该方法包括响应于复位信号产生对应于像素中明显的初始电压电平的第一数字数据，反转第一数字数据，输出对应于从CMOS图像传感器外部接收的图像数据的检测电压，并计数 与等于反相的第一数字数据的初始值开始的时钟信号的同步，以及响应于检测电压的电压电平的时间量。

公开(公告)号：US20150340070A1

公开(公告)日：2015-11-26

申请号：US14819978

申请日：2015-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WUN-KI JUNG ,  MIN-HO KWON ,  KWI-SUNG YOO ,  WON-HO CHOI ,  DONG-HUN LEE ,  SEOG-HEON HAM

IPC: G11C7/06 ,  G11C7/10 ,  H01L27/146 ,  G11C7/22

CPC classification number: G11C7/06 ,  G11C7/10 ,  G11C7/1033 ,  G11C7/1051 ,  G11C7/22 ,  G11C19/00 ,  G11C27/02 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14643

Abstract: A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

Abstract translation: 行存储器件包括多个存储单元，数据线对，读出放大器和输出单元。 多个存储单元被一行地相邻配置。 数据线对耦合到存储器单元以将存储在存储器单元中的存储器数据位顺序传送到读出放大器。 读出放大器被配置为放大通过数据线对顺序传送的存储器数据位，相应的延迟时间彼此不同。 输出单元对读出放大器的输出进行采样，以响应读取的时钟信号顺序地输出存储器数据位的重新定时数据位。 读取时钟信号具有小于延迟时间之间的最大延迟时间的循环周期。

公开(公告)号：US20130228672A1

公开(公告)日：2013-09-05

申请号：US13757977

申请日：2013-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WUN-KI JUNG ,  MIN-HO KWON ,  KWI-SUNG YOO ,  WON-HO CHOI ,  DONG-HUN LEE ,  SEOG-HEON HAM

IPC: G11C7/06 ,  H01L27/146 ,  G11C7/10

CPC classification number: G11C7/06 ,  G11C7/10 ,  G11C7/1033 ,  G11C7/1051 ,  G11C7/22 ,  G11C19/00 ,  G11C27/02 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14643

Abstract: A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.