公开(公告)号：US09685519B2

公开(公告)日：2017-06-20

申请号：US14728328

申请日：2015-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Ra Kim ,  Seung-Hwan Kim ,  Sung-Hee Lee ,  Dae-Sin Kim ,  Ji-Young Kim ,  Dong-Soo Woo

IPC: H01L29/66 ,  H01L21/332 ,  H01L29/423 ,  H01L29/78 ,  H01L27/108 ,  H01L21/762 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L21/76229 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/407 ,  H01L29/7827 ,  H01L29/785

Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

公开(公告)号：US09082850B2

公开(公告)日：2015-07-14

申请号：US13959765

申请日：2013-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Ra Kim ,  Seung-Hwan Kim ,  Sung-Hee Lee ,  Dae-Sin Kim ,  Ji-Young Kim ,  Dong-Soo Woo

IPC: H01L29/66 ,  H01L29/78 ,  H01L27/108 ,  H01L29/423 ,  H01L21/762

CPC classification number: H01L29/4236 ,  H01L21/76229 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/407 ,  H01L29/7827 ,  H01L29/785

Abstract: A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

Abstract translation: 半导体器件包括在衬底中的场区域以限定有源区域，栅极沟槽包括跨过有源区域设置的有源沟槽和场区域中的场沟槽，以及填充栅极沟槽并在第一方向上延伸的字线。 字线包括占据有源沟槽的有源栅电极和占据场沟的场栅电极。 设置在彼此相邻并且在其间具有一个字线的有源区之间的每个场栅电极的底表面被设置在比有源栅电极的底表面更高的电平。