公开(公告)号：US20140332905A1

公开(公告)日：2014-11-13

申请号：US14444200

申请日：2014-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwook Lee ,  Inseak Hwang

IPC: H01L29/36 ,  H01L29/78

CPC classification number: H01L29/36 ,  H01L29/772 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes forming a gate dielectric layer comprising an oxide, and at least one conductive layer on a substrate, forming a mask on the conductive layer and patterning the at least one conductive layer by etching the at least one conductive layer using the mask as an etch mask to thereby form a gate electrode, wherein the oxide of the gate dielectric layer and the material of the at least one conductive layer are selected such that a byproduct of the etching of the at least one conductive layer, formed on the mask during the etching of the at least one conductive layer, comprises an oxide having a higher etch rate with respect to an etchant than the oxide of the gate dielectric layer.

Abstract translation: 一种制造半导体器件的方法包括：形成包含氧化物的栅极电介质层和在衬底上的至少一个导电层，在导电层上形成掩模，并通过蚀刻所述至少一个导电层来图案化所述至少一个导电层 使用掩模作为蚀刻掩模从而形成栅电极，其中选择栅介质层的氧化物和至少一个导电层的材料，使得形成的至少一个导电层的蚀刻副产物形成 在蚀刻所述至少一个导电层期间在掩模上包含相对于蚀刻剂具有比栅极电介质层的氧化物更高的蚀刻速率的氧化物。

公开(公告)号：US11342203B2

公开(公告)日：2022-05-24

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Jeong ,  Mihyun Park ,  Yongsun Ko ,  Kwangwook Lee ,  Kuntack Lee ,  Hayoung Jeon ,  Yongjhin Cho ,  Jihoon Cha

IPC: H01L21/02 ,  H01L21/67

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.