公开(公告)号：US09213598B2

公开(公告)日：2015-12-15

申请号：US14175342

申请日：2014-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngil Seo ,  Jungho Yun ,  Wonchul Lee ,  Dawoon Jung

IPC: G11C29/00 ,  G06F11/10

CPC classification number: G06F11/1048

Abstract: A nonvolatile memory device includes a nonvolatile memory, a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory, an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error, and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit. The plurality of read data is read through a read operation with respect to a same page.

Abstract translation: 非易失性存储器件包括非易失性存储器，缓冲存储器，被配置为存储从非易失性存储器发送的多个读取数据;错误检测和校正电路，被配置为检测多个读取数据中的每一个的部分数据中的错误，并且判断 基于检测到的错误是否可校正部分数据;以及控制器，被配置为分析关于多个读取数据的不可校正部分数据以确定代表值，并将代表值发送到错误检测 和校正电路。 通过对同一页面的读取操作来读取多个读取数据。

公开(公告)号：US10467094B2

公开(公告)日：2019-11-05

申请号：US15429486

申请日：2017-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangwoo Kim ,  Jungho Yun

IPC: G06F11/10 ,  G06F3/06 ,  G06F11/14 ,  G11C29/52 ,  G11C29/02 ,  G11C29/00 ,  G11C29/04

Abstract: A recovery method and apparatus for use in a redundant array of independent disks (RAID) storage device is provided that includes a plurality of nonvolatile memory devices. The recovery method includes: reading a data chunk, in which an uncorrectable error occurs, from the plurality of nonvolatile memory devices, selecting a plurality of sub-stripes including a parity and excluding the data chunk, and performing, in parallel, a first recovery operation of adjusting a read level to recover the data chunk and a second recovery operation of processing the plurality of sub-stripes to recover a sub-stripe including the data chunk. The parallel performance of the first and second recovery operations is completed according to an earlier completion of one of the first and second recovery operations.

公开(公告)号：US20140237165A1

公开(公告)日：2014-08-21

申请号：US14081371

申请日：2013-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGIL SEO ,  Jungho Yun ,  Wonchul Lee ,  Dawoon Jung

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/1032 ,  G06F2212/7205

Abstract: A memory controller controlling a nonvolatile memory device having a plurality of memory blocks as a data storage space includes an error detection and correction circuit and a reclaim control unit. The error detection and correction circuit receives data from a memory block and calculates a comparison result by comparing a bit error rate of the received data and a predetermined value. The reclaim control unit determines whether or not to perform a read reclaim operation depending on the comparison result and a read voltage used to read the data. The read reclaim operation copies the data to a memory block different from a memory block having stored the data.

Abstract translation: 控制具有多个存储块作为数据存储空间的非易失性存储器件的存储器控​​制器包括错误检测和校正电路以及回收控制单元。 误差检测和校正电路从存储器块接收数据，并通过比较接收到的数据的误码率和预定值来计算比较结果。 回收控制单元根据比较结果和用于读取数据的读取电压来确定是否执行读取回收操作。 读回收操作将数据复制到与存储数据的存储块不同的存储器块。

公开(公告)号：US09519576B2

公开(公告)日：2016-12-13

申请号：US14081371

申请日：2013-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngil Seo ,  Jungho Yun ,  Wonchul Lee ,  Dawoon Jung

IPC: G11C11/00 ,  G06F12/02 ,  G06F11/00

CPC classification number: G06F12/0246 ,  G06F2212/1032 ,  G06F2212/7205

Abstract: A memory controller controlling a nonvolatile memory device having a plurality of memory blocks as a data storage space includes an error detection and correction circuit and a reclaim control unit. The error detection and correction circuit receives data from a memory block and calculates a comparison result by comparing a bit error rate of the received data and a predetermined value. The reclaim control unit determines whether or not to perform a read reclaim operation depending on the comparison result and a read voltage used to read the data. The read reclaim operation copies the data to a memory block different from a memory block having stored the data.

Abstract translation: 控制具有多个存储块作为数据存储空间的非易失性存储器件的存储器控​​制器包括错误检测和校正电路以及回收控制单元。 误差检测和校正电路从存储器块接收数据，并通过比较接收到的数据的误码率和预定值来计算比较结果。 回收控制单元根据比较结果和用于读取数据的读取电压来确定是否执行读取回收操作。 读回收操作将数据复制到与存储数据的存储块不同的存储器块。

公开(公告)号：US09348708B2

公开(公告)日：2016-05-24

申请号：US14172948

申请日：2014-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dawoon Jung ,  Jungho Yun ,  Min-Chul Kim ,  Youngil Seo ,  Wonchul Lee

IPC: G06F11/00 ,  G06F11/16 ,  G06F12/02 ,  G11C29/00 ,  G06F11/07

CPC classification number: G06F11/1666 ,  G06F11/073 ,  G06F11/0751 ,  G06F12/0246 ,  G06F2212/7202 ,  G11C29/76

Abstract: A memory system comprises a nonvolatile memory comprising a memory block having multiple pages, and a controller configured to control the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source. The controller is configured to determine whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map, and as a consequence of determining that the logical address corresponds to the bad page, remaps the logical address to a different page and stores dummy data in the bad page.

Abstract translation: 存储器系统包括非易失性存储器，其包括具有多个页面的存储块，以及控制器，被配置为根据从外部源接收的命令和逻辑地址来控制非易失性存储器将数据存储在存储块中。 控制器被配置为通过参考坏页映射来确定逻辑地址当前是否被映射到存储器块的坏页，并且作为确定逻辑地址对应于坏页的结果，将逻辑地址重新映射到 不同的页面，并将虚拟数据存储在坏页面中。