公开(公告)号：US20190355905A1

公开(公告)日：2019-11-21

申请号：US16529017

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu YANG ,  Seong Geon PARK ,  Dong Jun SEONG ,  Dong Ho AHN ,  Jung Moo LEE ,  Seol CHOI ,  Hideki HORN

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US20180040818A1

公开(公告)日：2018-02-08

申请号：US15401474

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu YANG ,  Seong Geon PARK ,  Dong Jun SEONG ,  Dong Ho AHN ,  Jung Moo LEE ,  Seol CHOI ,  Hideki HORII

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1641 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2013/0083 ,  G11C2213/76 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US20240237564A1

公开(公告)日：2024-07-11

申请号：US18236651

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukhwan CHUNG ,  Zhe WU ,  Jung Moo LEE ,  Hideki HORII

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/00 ,  H10B63/10 ,  H10N70/20

CPC classification number: H10N70/8828 ,  C22C30/00 ,  H10B63/10 ,  H10B63/24 ,  H10N70/231

Abstract: A variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (A) and is represented as ApGexSbyTez, an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5, an atomic concentration ‘z’ of the tellurium is 0.3≤z

公开(公告)号：US20190013357A1

公开(公告)日：2019-01-10

申请号：US16018333

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk KIM ,  Jeong Hee PARK ,  Seong Geon PARK ,  Soon Oh PARK ,  Jung Moo LEE

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C8/14 ,  G11C7/18

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.